Nanoscale lithography with electron exposure of sio2 resists

Thomas K. Whidden, John Allgair, Angela Jenkins-Gray, Maroun Khoury, Michael N. Kozickl, David K. Ferry

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report on electron-beam patterned hydrocarbon residues on silicon dioxide as chemical initiators in high temperature HF vapor etching for the production of nanolithographic masks (^ 20 nm feature size). These are of utility in reactive ion etching based pattern transfer to the underlying substrate and, potentially, as dielectric components in nanoscale devices. Metallic cobalt, deposited through the oxide mask, has been used to generate 12-20 nm wide lines of cobalt suicide.

Original languageEnglish (US)
Pages (from-to)4420-4425
Number of pages6
JournalJapanese Journal of Applied Physics
Volume34
Issue number8
DOIs
StatePublished - Aug 1995

Keywords

  • CEVE
  • Chemically enhanced vapor etching
  • Inorganic nanolithographic masks
  • Nanofabrication
  • Nanolithography
  • Silicon dioxide etching
  • Silicon nanofabrication

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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