Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers

Bradley M. West, Michael Stuckelberger, Barry Lai, Jörg Maser, Mariana Bertoni

Research output: Contribution to journalArticle

Abstract

We investigate the kinetics of elemental segregation during the synthesis of Cu(In1-x,Gax)Se2 (CIGS) thin films via a rapid thermal growth process. Changes in elemental concentration are mapped rapidly via in situ X-ray fluorescence (XRF) microscopy. In situ XRF enables the quantification of Cu, In, Ga, and Se concentrations with 200 nm spatial resolution over a region of 7 μm × 7 μm, large enough to map multiple CIGS grains. Reacting elemental precursor stacks at 500, 550, and 600 °C, we find that copper is the driving force for α-CIGS phase formation at a rate of 17 nmol/cm2/min at 500 °C. Because of the thermal expansion of the substrate, cluster analysis and classification algorithms were employed to track compositionally similar regions over time and across samples measured at different temperatures. Beyond the direct application of these results for the optimization of CIGS manufacturing, these in situ experiments demonstrate the feasibility of quantitative compositional evaluation at the nanoscale during the synthesis of technologically relevant materials. In combination with advanced analysis methods, this example shows how correlative X-ray microscopy can contribute to the solution of the materials paradigm, relating synthesis to composition and properties at the nanoscale.

Original languageEnglish (US)
Pages (from-to)22897-22902
Number of pages6
JournalJournal of Physical Chemistry C
Volume122
Issue number40
DOIs
StatePublished - Oct 11 2018

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Growth kinetics
absorbers
X rays
kinetics
synthesis
microscopy
fluorescence
cluster analysis
x rays
Fluorescence microscopy
Cluster analysis
Thermal expansion
Copper
thermal expansion
Microscopic examination
manufacturing
spatial resolution
Fluorescence
Thin films
copper

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers. / West, Bradley M.; Stuckelberger, Michael; Lai, Barry; Maser, Jörg; Bertoni, Mariana.

In: Journal of Physical Chemistry C, Vol. 122, No. 40, 11.10.2018, p. 22897-22902.

Research output: Contribution to journalArticle

West, BM, Stuckelberger, M, Lai, B, Maser, J & Bertoni, M 2018, 'Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers', Journal of Physical Chemistry C, vol. 122, no. 40, pp. 22897-22902. https://doi.org/10.1021/acs.jpcc.8b05062
West, Bradley M. ; Stuckelberger, Michael ; Lai, Barry ; Maser, Jörg ; Bertoni, Mariana. / Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers. In: Journal of Physical Chemistry C. 2018 ; Vol. 122, No. 40. pp. 22897-22902.
@article{3494538d862d4e96b6361baf099014ee,
title = "Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers",
abstract = "We investigate the kinetics of elemental segregation during the synthesis of Cu(In1-x,Gax)Se2 (CIGS) thin films via a rapid thermal growth process. Changes in elemental concentration are mapped rapidly via in situ X-ray fluorescence (XRF) microscopy. In situ XRF enables the quantification of Cu, In, Ga, and Se concentrations with 200 nm spatial resolution over a region of 7 μm × 7 μm, large enough to map multiple CIGS grains. Reacting elemental precursor stacks at 500, 550, and 600 °C, we find that copper is the driving force for α-CIGS phase formation at a rate of 17 nmol/cm2/min at 500 °C. Because of the thermal expansion of the substrate, cluster analysis and classification algorithms were employed to track compositionally similar regions over time and across samples measured at different temperatures. Beyond the direct application of these results for the optimization of CIGS manufacturing, these in situ experiments demonstrate the feasibility of quantitative compositional evaluation at the nanoscale during the synthesis of technologically relevant materials. In combination with advanced analysis methods, this example shows how correlative X-ray microscopy can contribute to the solution of the materials paradigm, relating synthesis to composition and properties at the nanoscale.",
author = "West, {Bradley M.} and Michael Stuckelberger and Barry Lai and J{\"o}rg Maser and Mariana Bertoni",
year = "2018",
month = "10",
day = "11",
doi = "10.1021/acs.jpcc.8b05062",
language = "English (US)",
volume = "122",
pages = "22897--22902",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "40",

}

TY - JOUR

T1 - Nanoscale Growth Kinetics of Cu(In,Ga)Se2 Absorbers

AU - West, Bradley M.

AU - Stuckelberger, Michael

AU - Lai, Barry

AU - Maser, Jörg

AU - Bertoni, Mariana

PY - 2018/10/11

Y1 - 2018/10/11

N2 - We investigate the kinetics of elemental segregation during the synthesis of Cu(In1-x,Gax)Se2 (CIGS) thin films via a rapid thermal growth process. Changes in elemental concentration are mapped rapidly via in situ X-ray fluorescence (XRF) microscopy. In situ XRF enables the quantification of Cu, In, Ga, and Se concentrations with 200 nm spatial resolution over a region of 7 μm × 7 μm, large enough to map multiple CIGS grains. Reacting elemental precursor stacks at 500, 550, and 600 °C, we find that copper is the driving force for α-CIGS phase formation at a rate of 17 nmol/cm2/min at 500 °C. Because of the thermal expansion of the substrate, cluster analysis and classification algorithms were employed to track compositionally similar regions over time and across samples measured at different temperatures. Beyond the direct application of these results for the optimization of CIGS manufacturing, these in situ experiments demonstrate the feasibility of quantitative compositional evaluation at the nanoscale during the synthesis of technologically relevant materials. In combination with advanced analysis methods, this example shows how correlative X-ray microscopy can contribute to the solution of the materials paradigm, relating synthesis to composition and properties at the nanoscale.

AB - We investigate the kinetics of elemental segregation during the synthesis of Cu(In1-x,Gax)Se2 (CIGS) thin films via a rapid thermal growth process. Changes in elemental concentration are mapped rapidly via in situ X-ray fluorescence (XRF) microscopy. In situ XRF enables the quantification of Cu, In, Ga, and Se concentrations with 200 nm spatial resolution over a region of 7 μm × 7 μm, large enough to map multiple CIGS grains. Reacting elemental precursor stacks at 500, 550, and 600 °C, we find that copper is the driving force for α-CIGS phase formation at a rate of 17 nmol/cm2/min at 500 °C. Because of the thermal expansion of the substrate, cluster analysis and classification algorithms were employed to track compositionally similar regions over time and across samples measured at different temperatures. Beyond the direct application of these results for the optimization of CIGS manufacturing, these in situ experiments demonstrate the feasibility of quantitative compositional evaluation at the nanoscale during the synthesis of technologically relevant materials. In combination with advanced analysis methods, this example shows how correlative X-ray microscopy can contribute to the solution of the materials paradigm, relating synthesis to composition and properties at the nanoscale.

UR - http://www.scopus.com/inward/record.url?scp=85054392291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054392291&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.8b05062

DO - 10.1021/acs.jpcc.8b05062

M3 - Article

AN - SCOPUS:85054392291

VL - 122

SP - 22897

EP - 22902

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

SN - 1932-7447

IS - 40

ER -