Nanoscale compositional fluctuations in multiple inGaAs/GaAs quantum wires

M. Catalano, A. Taurino, M. Lomascolo, L. Vasanelli, M. De Giorgi, A. Passaseo, R. Rinaldi, R. Cingolani, O. Mauritz, G. Goldoni, F. Rossi, E. Molinari, Peter Crozier

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Abstract

An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.

Original languageEnglish (US)
Pages (from-to)2261-2264
Number of pages4
JournalJournal of Applied Physics
Volume87
Issue number5
DOIs
StatePublished - Mar 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Catalano, M., Taurino, A., Lomascolo, M., Vasanelli, L., De Giorgi, M., Passaseo, A., Rinaldi, R., Cingolani, R., Mauritz, O., Goldoni, G., Rossi, F., Molinari, E., & Crozier, P. (2000). Nanoscale compositional fluctuations in multiple inGaAs/GaAs quantum wires. Journal of Applied Physics, 87(5), 2261-2264. https://doi.org/10.1063/1.372170