Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon

Yang Chai, Yi Wu, Kuniharu Takei, Hong Yu Chen, Shimeng Yu, Philip C.H. Chan, Ali Javey, H. S.Philip Wong

Research output: Contribution to journalArticle

61 Scopus citations

Abstract

There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size.

Original languageEnglish (US)
Article number6026917
Pages (from-to)3933-3939
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number11
DOIs
StatePublished - Nov 1 2011

Keywords

  • Amorphous carbon (a-C)
  • carbon nanotube (CNT)
  • complementary resistive switching
  • nonvolatile memory
  • resistive random access memory (RRAM)
  • resistive switching memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Chai, Y., Wu, Y., Takei, K., Chen, H. Y., Yu, S., Chan, P. C. H., Javey, A., & Wong, H. S. P. (2011). Nanoscale bipolar and complementary resistive switching memory based on amorphous carbon. IEEE Transactions on Electron Devices, 58(11), 3933-3939. [6026917]. https://doi.org/10.1109/TED.2011.2164615