Abstract

Nanoporous structures of a p-type semiconductor, delafossite CuAlO2, with a high crystallinity have been fabricated through an inorganic/polymer double-gel process and characterized for the first time via Mott-Schottky measurements. The effect of the precursor concentration, calcination temperature, and atmosphere were examined to achieve high crystallinity and photoelectrochemical properties while maximizing the porosity. The optical properties of the nanoporous CuAlO2 are in good agreement with the literature with an optical band gap of 3.9 eV, and the observed high electrical conductivity and hole concentrations conform to highly crystalline and well-sintered nanoparticles observed in the product. The Mott-Schottky plot from the electrochemical impedance spectroscopy studies indicates a flat-band potential of 0.49 V versus Ag/AgCl. It is concluded that CuAlO2 exhibits band energies very close to those of NiO but with electrical properties very desirable in the fabrication of photoelectrochemical devices including dye-sensitized solar cells.

Original languageEnglish (US)
Pages (from-to)1100-1108
Number of pages9
JournalInorganic Chemistry
Volume54
Issue number3
DOIs
StatePublished - Feb 2 2015

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Inorganic polymers
electrode materials
crystallinity
photoelectrochemical devices
Gels
gels
p-type semiconductors
Electrodes
polymers
roasting
energy bands
Hole concentration
solar cells
plots
dyes
electrical properties
Optical band gaps
impedance
porosity
Electrochemical impedance spectroscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

Cite this

Nanoporous delafossite CuAlO2 from inorganic/polymer double gels : A desirable high-surface-area p-type transparent electrode material. / Das, Barun; Renaud, Adęle; Volosin, Alex M.; Yu, Lei; Newman, Nathan; Seo, Dong.

In: Inorganic Chemistry, Vol. 54, No. 3, 02.02.2015, p. 1100-1108.

Research output: Contribution to journalArticle

@article{7bc6973818c242e995b771a7a994efeb,
title = "Nanoporous delafossite CuAlO2 from inorganic/polymer double gels: A desirable high-surface-area p-type transparent electrode material",
abstract = "Nanoporous structures of a p-type semiconductor, delafossite CuAlO2, with a high crystallinity have been fabricated through an inorganic/polymer double-gel process and characterized for the first time via Mott-Schottky measurements. The effect of the precursor concentration, calcination temperature, and atmosphere were examined to achieve high crystallinity and photoelectrochemical properties while maximizing the porosity. The optical properties of the nanoporous CuAlO2 are in good agreement with the literature with an optical band gap of 3.9 eV, and the observed high electrical conductivity and hole concentrations conform to highly crystalline and well-sintered nanoparticles observed in the product. The Mott-Schottky plot from the electrochemical impedance spectroscopy studies indicates a flat-band potential of 0.49 V versus Ag/AgCl. It is concluded that CuAlO2 exhibits band energies very close to those of NiO but with electrical properties very desirable in the fabrication of photoelectrochemical devices including dye-sensitized solar cells.",
author = "Barun Das and Adęle Renaud and Volosin, {Alex M.} and Lei Yu and Nathan Newman and Dong Seo",
year = "2015",
month = "2",
day = "2",
doi = "10.1021/ic5023906",
language = "English (US)",
volume = "54",
pages = "1100--1108",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "3",

}

TY - JOUR

T1 - Nanoporous delafossite CuAlO2 from inorganic/polymer double gels

T2 - A desirable high-surface-area p-type transparent electrode material

AU - Das, Barun

AU - Renaud, Adęle

AU - Volosin, Alex M.

AU - Yu, Lei

AU - Newman, Nathan

AU - Seo, Dong

PY - 2015/2/2

Y1 - 2015/2/2

N2 - Nanoporous structures of a p-type semiconductor, delafossite CuAlO2, with a high crystallinity have been fabricated through an inorganic/polymer double-gel process and characterized for the first time via Mott-Schottky measurements. The effect of the precursor concentration, calcination temperature, and atmosphere were examined to achieve high crystallinity and photoelectrochemical properties while maximizing the porosity. The optical properties of the nanoporous CuAlO2 are in good agreement with the literature with an optical band gap of 3.9 eV, and the observed high electrical conductivity and hole concentrations conform to highly crystalline and well-sintered nanoparticles observed in the product. The Mott-Schottky plot from the electrochemical impedance spectroscopy studies indicates a flat-band potential of 0.49 V versus Ag/AgCl. It is concluded that CuAlO2 exhibits band energies very close to those of NiO but with electrical properties very desirable in the fabrication of photoelectrochemical devices including dye-sensitized solar cells.

AB - Nanoporous structures of a p-type semiconductor, delafossite CuAlO2, with a high crystallinity have been fabricated through an inorganic/polymer double-gel process and characterized for the first time via Mott-Schottky measurements. The effect of the precursor concentration, calcination temperature, and atmosphere were examined to achieve high crystallinity and photoelectrochemical properties while maximizing the porosity. The optical properties of the nanoporous CuAlO2 are in good agreement with the literature with an optical band gap of 3.9 eV, and the observed high electrical conductivity and hole concentrations conform to highly crystalline and well-sintered nanoparticles observed in the product. The Mott-Schottky plot from the electrochemical impedance spectroscopy studies indicates a flat-band potential of 0.49 V versus Ag/AgCl. It is concluded that CuAlO2 exhibits band energies very close to those of NiO but with electrical properties very desirable in the fabrication of photoelectrochemical devices including dye-sensitized solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84961288232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961288232&partnerID=8YFLogxK

U2 - 10.1021/ic5023906

DO - 10.1021/ic5023906

M3 - Article

VL - 54

SP - 1100

EP - 1108

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 3

ER -