Nanopipes and inversion domains in high-quality GaN epitaxial layers

Fernando Ponce, W. T. Young, D. Cherns, J. W. Steeds, S. Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages405-410
Number of pages6
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

Fingerprint

Epitaxial layers
Burgers vector
Defects
Dislocations (crystals)
Electron diffraction
Electron microscopy
Thin films
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ponce, F., Young, W. T., Cherns, D., Steeds, J. W., & Nakamura, S. (1997). Nanopipes and inversion domains in high-quality GaN epitaxial layers. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 405-410). Materials Research Society.

Nanopipes and inversion domains in high-quality GaN epitaxial layers. / Ponce, Fernando; Young, W. T.; Cherns, D.; Steeds, J. W.; Nakamura, S.

Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 405-410.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ponce, F, Young, WT, Cherns, D, Steeds, JW & Nakamura, S 1997, Nanopipes and inversion domains in high-quality GaN epitaxial layers. in FA Ponce, TD Moustakas, I Akasaki & BA Monemar (eds), Materials Research Society Symposium - Proceedings. vol. 449, Materials Research Society, pp. 405-410, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 12/2/96.
Ponce F, Young WT, Cherns D, Steeds JW, Nakamura S. Nanopipes and inversion domains in high-quality GaN epitaxial layers. In Ponce FA, Moustakas TD, Akasaki I, Monemar BA, editors, Materials Research Society Symposium - Proceedings. Vol. 449. Materials Research Society. 1997. p. 405-410
Ponce, Fernando ; Young, W. T. ; Cherns, D. ; Steeds, J. W. ; Nakamura, S. / Nanopipes and inversion domains in high-quality GaN epitaxial layers. Materials Research Society Symposium - Proceedings. editor / F.A. Ponce ; T.D. Moustakas ; I. Akasaki ; B.A. Monemar. Vol. 449 Materials Research Society, 1997. pp. 405-410
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