Nanopipes and inversion domains in high-quality GaN epitaxial layers

Fernando Ponce, W. T. Young, D. Cherns, J. W. Steeds, S. Nakamura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

In this paper we report that, in addition to dislocations, two other types of defects are observed in high quality GaN thin films. These defects have a filamentary nature, are oriented along the (0001) direction and may not be easily distinguished from the pure dislocations. Using a combination of conventional electron microscopy with convergent beam electron diffraction techniques we show that one of these types of dislocations consist of nanopipes, which are coreless dislocations with Burgers vectors inversion domains with [0001] orientation within the [0001] matrix. The origin of the inversion domains and nanopipes is discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages405-410
Number of pages6
Volume449
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9612/6/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Ponce, F., Young, W. T., Cherns, D., Steeds, J. W., & Nakamura, S. (1997). Nanopipes and inversion domains in high-quality GaN epitaxial layers. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 405-410). Materials Research Society.