The epitaxial growth of Ge nanopillars (NP) on Si (100) by vapor-liquid-solid (VLS) growth from digermane was analyzed. It was shown that NP growth mode occurs at low digermane pressures. It was observed that the Ge NP grow epitaxially on the Si substrate in both the axial and lateral directions, and are fully relaxed. It was confirmed by the high resolution electron microscopy that the NPs are epitaxial with the Si (100) substrate and are fully relaxed and strain free.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)