Nanopillar growth mode by vapor-liquid-solid epitaxy

J. L. Taraci, J. W. Dailey, T. Clement, David Smith, Jeffery Drucker, S. T. Picraux

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Abstract

The epitaxial growth of Ge nanopillars (NP) on Si (100) by vapor-liquid-solid (VLS) growth from digermane was analyzed. It was shown that NP growth mode occurs at low digermane pressures. It was observed that the Ge NP grow epitaxially on the Si substrate in both the axial and lateral directions, and are fully relaxed. It was confirmed by the high resolution electron microscopy that the NPs are epitaxial with the Si (100) substrate and are fully relaxed and strain free.

Original languageEnglish (US)
Pages (from-to)5302-5304
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number26
DOIs
StatePublished - Jun 28 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Taraci, J. L., Dailey, J. W., Clement, T., Smith, D., Drucker, J., & Picraux, S. T. (2004). Nanopillar growth mode by vapor-liquid-solid epitaxy. Applied Physics Letters, 84(26), 5302-5304. https://doi.org/10.1063/1.1766076