Because of its unique properties and well-established processing techniques, SiO2 has wide application in the integrated circuit industry. The ability to directly pattern SiO2 with nanometer resolution by electron beam irradiation is therefore of great importance in the fabrication of both ultrasmall conventional and quantum devices. In this letter we demonstrate the replication of trenches with feature sizes as small as 10 nm into polycrystalline silicon and single-crystal and via reactive ion etching by using electron beam direct patterned SiO2 as the mask.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)