Nanometer scale composition variations in Ge quantum dots on Si(100)

Yangting Zhang, Margaret Floyd, Jeffery Drucker, Peter Crozier, David Smith, K. P. Driver

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electron-energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) was used to measure nm-scale composition variations in Ge/Si(100) islands grown by molecular beam epitaxy (MBE) at substrate temperatures 400°C ≤ T ≤ 700°C and a growth rate of 1.4 ML/min (1 monolayer, ML=6.78×10 14 atoms/cm 2). These measurements were correlated with island ensemble morphology determined by atomic force microscopy (AFM). The average Si concentration of the islands and Si/Ge interface width increased monotonically with growth temperature. Integrated island volumes measured by AFM were proportional to the equivalent Ge coverage, θ Ge, with slopes greater than one for the higher deposition temperatures. This result confirms that the islands grow faster than the Ge deposition rate. Linear behavior of the island volume vs. θ Ge curves implies that the average Ge composition is independent of island size. The volume at which islands change shape from pyramids to domes correlates well with the average Ge content of the islands in the context of simple strain-scaling arguments. For T=700°C, rapid Si interdiffusion precludes formation of pure Ge pyramids for growth at 1.4 ML/min. Growth at 4.8 ML/min kinetically stabilizes pure Ge pyramid clusters, allowing their formation prior to Si interdiffusion.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.M. Plitzko, G. Duscher, Y. Zhu, H. Ichinose
Pages137-142
Number of pages6
Volume727
StatePublished - 2002
EventNanostructured Interfaces - San Francisco, CA, United States
Duration: Apr 2 2002Apr 4 2002

Other

OtherNanostructured Interfaces
CountryUnited States
CitySan Francisco, CA
Period4/2/024/4/02

Fingerprint

Semiconductor quantum dots
Atomic force microscopy
Electron energy loss spectroscopy
Domes
Growth temperature
Deposition rates
Chemical analysis
Molecular beam epitaxy
Monolayers
Electron microscopes
Scanning
Atoms
Temperature
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Zhang, Y., Floyd, M., Drucker, J., Crozier, P., Smith, D., & Driver, K. P. (2002). Nanometer scale composition variations in Ge quantum dots on Si(100). In J. M. Plitzko, G. Duscher, Y. Zhu, & H. Ichinose (Eds.), Materials Research Society Symposium - Proceedings (Vol. 727, pp. 137-142)

Nanometer scale composition variations in Ge quantum dots on Si(100). / Zhang, Yangting; Floyd, Margaret; Drucker, Jeffery; Crozier, Peter; Smith, David; Driver, K. P.

Materials Research Society Symposium - Proceedings. ed. / J.M. Plitzko; G. Duscher; Y. Zhu; H. Ichinose. Vol. 727 2002. p. 137-142.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhang, Y, Floyd, M, Drucker, J, Crozier, P, Smith, D & Driver, KP 2002, Nanometer scale composition variations in Ge quantum dots on Si(100). in JM Plitzko, G Duscher, Y Zhu & H Ichinose (eds), Materials Research Society Symposium - Proceedings. vol. 727, pp. 137-142, Nanostructured Interfaces, San Francisco, CA, United States, 4/2/02.
Zhang Y, Floyd M, Drucker J, Crozier P, Smith D, Driver KP. Nanometer scale composition variations in Ge quantum dots on Si(100). In Plitzko JM, Duscher G, Zhu Y, Ichinose H, editors, Materials Research Society Symposium - Proceedings. Vol. 727. 2002. p. 137-142
Zhang, Yangting ; Floyd, Margaret ; Drucker, Jeffery ; Crozier, Peter ; Smith, David ; Driver, K. P. / Nanometer scale composition variations in Ge quantum dots on Si(100). Materials Research Society Symposium - Proceedings. editor / J.M. Plitzko ; G. Duscher ; Y. Zhu ; H. Ichinose. Vol. 727 2002. pp. 137-142
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