Nanometer-scale composition measurements of Ge/Si(100) islands

Margaret Floyd; Yangting Zhang; K. P. Driver; Jeffery Drucker; Peter Crozier; David Smith

doi:10.1063/1.1558215

Nanometer-scale composition measurements of Ge/Si(100) islands

Margaret Floyd, Yangting Zhang, K. P. Driver, Jeffery Drucker, Peter Crozier, David Smith

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76 Scopus citations

Abstract

Nanometer-scale composition of Ge/Si(100) islands grown by molecular-beam epitaxy was measured by electron energy-loss spectroscopy (EELS). When the growth temperature was increased from 400 to 700°C, the Ge concentration X_Ge decreased and the Ge/Si interface became more diffuse. Atomic force microscopy results showed that integrated island volumes increased linearly with Ge coverage θ_Ge, with slopes greater than 1.

Original language	English (US)
Pages (from-to)	1473-1475
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	9
DOIs	https://doi.org/10.1063/1.1558215
State	Published - Mar 3 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1558215

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@article{3b198ed0d39f491ca6bba52127f94c50,

title = "Nanometer-scale composition measurements of Ge/Si(100) islands",

abstract = "Nanometer-scale composition of Ge/Si(100) islands grown by molecular-beam epitaxy was measured by electron energy-loss spectroscopy (EELS). When the growth temperature was increased from 400 to 700°C, the Ge concentration XGe decreased and the Ge/Si interface became more diffuse. Atomic force microscopy results showed that integrated island volumes increased linearly with Ge coverage θGe, with slopes greater than 1.",

author = "Margaret Floyd and Yangting Zhang and Driver, {K. P.} and Jeffery Drucker and Peter Crozier and David Smith",

year = "2003",

month = mar,

day = "3",

doi = "10.1063/1.1558215",

language = "English (US)",

volume = "82",

pages = "1473--1475",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Nanometer-scale composition measurements of Ge/Si(100) islands

AU - Floyd, Margaret

AU - Zhang, Yangting

AU - Driver, K. P.

AU - Drucker, Jeffery

AU - Crozier, Peter

AU - Smith, David

PY - 2003/3/3

Y1 - 2003/3/3

N2 - Nanometer-scale composition of Ge/Si(100) islands grown by molecular-beam epitaxy was measured by electron energy-loss spectroscopy (EELS). When the growth temperature was increased from 400 to 700°C, the Ge concentration XGe decreased and the Ge/Si interface became more diffuse. Atomic force microscopy results showed that integrated island volumes increased linearly with Ge coverage θGe, with slopes greater than 1.

AB - Nanometer-scale composition of Ge/Si(100) islands grown by molecular-beam epitaxy was measured by electron energy-loss spectroscopy (EELS). When the growth temperature was increased from 400 to 700°C, the Ge concentration XGe decreased and the Ge/Si interface became more diffuse. Atomic force microscopy results showed that integrated island volumes increased linearly with Ge coverage θGe, with slopes greater than 1.

UR - http://www.scopus.com/inward/record.url?scp=0037416601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037416601&partnerID=8YFLogxK

U2 - 10.1063/1.1558215

DO - 10.1063/1.1558215

M3 - Article

AN - SCOPUS:0037416601

SN - 0003-6951

VL - 82

SP - 1473

EP - 1475

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Nanometer-scale composition measurements of Ge/Si(100) islands

Abstract

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