Nanometer-scale composition of Ge/Si(100) islands grown by molecular-beam epitaxy was measured by electron energy-loss spectroscopy (EELS). When the growth temperature was increased from 400 to 700°C, the Ge concentration XGe decreased and the Ge/Si interface became more diffuse. Atomic force microscopy results showed that integrated island volumes increased linearly with Ge coverage θGe, with slopes greater than 1.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)