Nanolithography on semiconductor surfaces under an etching solution

L. A. Nagahara, T. Thundat, Stuart Lindsay

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

We describe a technique for controllably etching nanometer size features into Si(100) and GaAs(100) surfaces with the scanning tunneling microscope while under a (0.05%) HF solution which dissolves oxides. The etching mechanism appears to be due to a field-induced oxide growth followed by a chemical etching of the oxide. With this technique, we can etch features as small as 20 nm in linewidth.

Original languageEnglish (US)
Pages (from-to)270-272
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number3
DOIs
StatePublished - 1990

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etching
oxides
microscopes
scanning

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nanolithography on semiconductor surfaces under an etching solution. / Nagahara, L. A.; Thundat, T.; Lindsay, Stuart.

In: Applied Physics Letters, Vol. 57, No. 3, 1990, p. 270-272.

Research output: Contribution to journalArticle

Nagahara, L. A. ; Thundat, T. ; Lindsay, Stuart. / Nanolithography on semiconductor surfaces under an etching solution. In: Applied Physics Letters. 1990 ; Vol. 57, No. 3. pp. 270-272.
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