Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates

Terry Alford; P. K. Shetty; N. D. Theodore; N. Tile; D. Adams; J. W. Mayer

doi:10.1016/j.tsf.2007.07.204

Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates

Terry Alford, P. K. Shetty, N. D. Theodore, N. Tile, D. Adams, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Polysilicon (poly-Si) films fabricated on flexible substrates are of considerable interest because of their potential application in flexible displays. In this study, an 800 nm layer of amorphous silicon (a-Si), followed by a 20 nm layer of aluminum (Al), were deposited on polyimide/silicon and silicon dioxide/silicon (SiO₂/Si) substrates. Samples on polyimide were rapid thermal annealed at 900 °C for 20 s, while those on SiO₂/Si were vacuum annealed at temperatures between 200 and 600 °C for 1 h. Film properties were analyzed using Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and X-ray diffraction. Silicon films containing nanocrystallites and pores were obtained, with a pore formation activation energy (E_A) of 0.59 eV. A short-range self-diffusion model is proposed for the formation of Si crystallites in cases where the solid-solubility limit for Si dissolution into Al has not been reached.

Original language	English (US)
Pages (from-to)	3940-3947
Number of pages	8
Journal	Thin Solid Films
Volume	516
Issue number	12
DOIs	https://doi.org/10.1016/j.tsf.2007.07.204
State	Published - Apr 30 2008

Keywords

Aluminum induced crystallization
Polyimide
XTEM

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.07.204

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title = "Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates",

abstract = "Polysilicon (poly-Si) films fabricated on flexible substrates are of considerable interest because of their potential application in flexible displays. In this study, an 800 nm layer of amorphous silicon (a-Si), followed by a 20 nm layer of aluminum (Al), were deposited on polyimide/silicon and silicon dioxide/silicon (SiO2/Si) substrates. Samples on polyimide were rapid thermal annealed at 900 °C for 20 s, while those on SiO2/Si were vacuum annealed at temperatures between 200 and 600 °C for 1 h. Film properties were analyzed using Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and X-ray diffraction. Silicon films containing nanocrystallites and pores were obtained, with a pore formation activation energy (EA) of 0.59 eV. A short-range self-diffusion model is proposed for the formation of Si crystallites in cases where the solid-solubility limit for Si dissolution into Al has not been reached.",

keywords = "Aluminum induced crystallization, Polyimide, XTEM",

author = "Terry Alford and Shetty, {P. K.} and Theodore, {N. D.} and N. Tile and D. Adams and Mayer, {J. W.}",

note = "Funding Information: This work was partially supported by the National Science Foundation (L. Hess, C. Huber Grant No. DMR-0602716) to whom the authors are greatly indebted.",

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doi = "10.1016/j.tsf.2007.07.204",

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T1 - Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates

AU - Alford, Terry

AU - Shetty, P. K.

AU - Theodore, N. D.

AU - Tile, N.

AU - Adams, D.

AU - Mayer, J. W.

N1 - Funding Information: This work was partially supported by the National Science Foundation (L. Hess, C. Huber Grant No. DMR-0602716) to whom the authors are greatly indebted.

PY - 2008/4/30

Y1 - 2008/4/30

N2 - Polysilicon (poly-Si) films fabricated on flexible substrates are of considerable interest because of their potential application in flexible displays. In this study, an 800 nm layer of amorphous silicon (a-Si), followed by a 20 nm layer of aluminum (Al), were deposited on polyimide/silicon and silicon dioxide/silicon (SiO2/Si) substrates. Samples on polyimide were rapid thermal annealed at 900 °C for 20 s, while those on SiO2/Si were vacuum annealed at temperatures between 200 and 600 °C for 1 h. Film properties were analyzed using Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and X-ray diffraction. Silicon films containing nanocrystallites and pores were obtained, with a pore formation activation energy (EA) of 0.59 eV. A short-range self-diffusion model is proposed for the formation of Si crystallites in cases where the solid-solubility limit for Si dissolution into Al has not been reached.

AB - Polysilicon (poly-Si) films fabricated on flexible substrates are of considerable interest because of their potential application in flexible displays. In this study, an 800 nm layer of amorphous silicon (a-Si), followed by a 20 nm layer of aluminum (Al), were deposited on polyimide/silicon and silicon dioxide/silicon (SiO2/Si) substrates. Samples on polyimide were rapid thermal annealed at 900 °C for 20 s, while those on SiO2/Si were vacuum annealed at temperatures between 200 and 600 °C for 1 h. Film properties were analyzed using Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and X-ray diffraction. Silicon films containing nanocrystallites and pores were obtained, with a pore formation activation energy (EA) of 0.59 eV. A short-range self-diffusion model is proposed for the formation of Si crystallites in cases where the solid-solubility limit for Si dissolution into Al has not been reached.

KW - Aluminum induced crystallization

KW - Polyimide

KW - XTEM

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Nanocrystalline Si formation in the a-Si/Al system on polyimide and silicon dioxide substrates

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Keywords

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