Nano-XRF and micro-raman studies of metal impurity decoration around dislocations in multicrystalline silicon

Mariana Bertoni, G. Sarau, D. P. Fenning, M. Rinio, V. Rose, J. Maser, T. Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages1613-1616
Number of pages4
DOIs
Publication statusPublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

    Fingerprint

Keywords

  • dislocations
  • micro-Raman
  • silicon solar cells
  • X-ray fluorescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Bertoni, M., Sarau, G., Fenning, D. P., Rinio, M., Rose, V., Maser, J., & Buonassisi, T. (2012). Nano-XRF and micro-raman studies of metal impurity decoration around dislocations in multicrystalline silicon. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1613-1616). [6317904] https://doi.org/10.1109/PVSC.2012.6317904