Nano-XRF and micro-raman studies of metal impurity decoration around dislocations in multicrystalline silicon

Mariana Bertoni, G. Sarau, D. P. Fenning, M. Rinio, V. Rose, J. Maser, T. Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1613-1616
Number of pages4
DOIs
StatePublished - Nov 26 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • X-ray fluorescence
  • dislocations
  • micro-Raman
  • silicon solar cells

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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