Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries during mc-Silicon Solar Cell Processing

Simone Bernardini, Steve Johnston, Bradley West, Tine U. Naerland, Michael Stuckelberger, Barry Lai, Mariana Bertoni

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-To-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.

Original languageEnglish (US)
Article number7742961
Pages (from-to)244-249
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume7
Issue number1
DOIs
StatePublished - Jan 1 2017

Fingerprint

Silicon solar cells
Photoluminescence
Grain boundaries
grain boundaries
solar cells
Metals
Impurities
photoluminescence
impurities
Energy gap
Processing
metals
Solar cells
Broadcasting
Synchrotrons
Silicon wafers
Leakage currents
acquisition
synchrotrons
leakage

Keywords

  • Multicrystalline silicon (mc-Si)
  • photoluminescence (PL)
  • PL band reversal sub-band PL
  • X-ray fluorescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries during mc-Silicon Solar Cell Processing. / Bernardini, Simone; Johnston, Steve; West, Bradley; Naerland, Tine U.; Stuckelberger, Michael; Lai, Barry; Bertoni, Mariana.

In: IEEE Journal of Photovoltaics, Vol. 7, No. 1, 7742961, 01.01.2017, p. 244-249.

Research output: Contribution to journalArticle

Bernardini, Simone ; Johnston, Steve ; West, Bradley ; Naerland, Tine U. ; Stuckelberger, Michael ; Lai, Barry ; Bertoni, Mariana. / Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries during mc-Silicon Solar Cell Processing. In: IEEE Journal of Photovoltaics. 2017 ; Vol. 7, No. 1. pp. 244-249.
@article{b99121dcc9714b02a4a53f4cd7900281,
title = "Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries during mc-Silicon Solar Cell Processing",
abstract = "Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-To-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.",
keywords = "Multicrystalline silicon (mc-Si), photoluminescence (PL), PL band reversal sub-band PL, X-ray fluorescence",
author = "Simone Bernardini and Steve Johnston and Bradley West and Naerland, {Tine U.} and Michael Stuckelberger and Barry Lai and Mariana Bertoni",
year = "2017",
month = "1",
day = "1",
doi = "10.1109/JPHOTOV.2016.2621340",
language = "English (US)",
volume = "7",
pages = "244--249",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",
number = "1",

}

TY - JOUR

T1 - Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries during mc-Silicon Solar Cell Processing

AU - Bernardini, Simone

AU - Johnston, Steve

AU - West, Bradley

AU - Naerland, Tine U.

AU - Stuckelberger, Michael

AU - Lai, Barry

AU - Bertoni, Mariana

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-To-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.

AB - Metal impurities are known to hinder the performance of commercial Si-based solar cells by inducing bulk recombination, increasing leakage current, and causing direct shunting. Recently, a set of photoluminescence (PL) images of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages has been acquired. Both band-To-band PL and sub-bandgap PL (subPL) images showed various regions with different PL signal intensity. Interestingly, in several of these regions a reversal of the subPL intensity was observed right after the deposition of the antireflective coating. In this paper, we present the results of the synchrotron-based nano-X-ray fluorescence imaging performed in areas characterized by the subPL reversal to evaluate the possible role of metal decoration in this uncommon behavior. Furthermore, the acquisition of a statistically meaningful set of data for samples taken at different stages of the solar cell manufacturing allows us to shine a light on the precipitation and rediffusion mechanisms of metal impurities at these grain boundaries.

KW - Multicrystalline silicon (mc-Si)

KW - photoluminescence (PL)

KW - PL band reversal sub-band PL

KW - X-ray fluorescence

UR - http://www.scopus.com/inward/record.url?scp=85008879529&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008879529&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2016.2621340

DO - 10.1109/JPHOTOV.2016.2621340

M3 - Article

AN - SCOPUS:85008879529

VL - 7

SP - 244

EP - 249

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

IS - 1

M1 - 7742961

ER -