Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors

Andrew Chizmeshya, John Kouvetakis, G. Grzybowski, R. Beeler, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A new synthetic strategy for (III-V)y(IV)5-2y materials is introduced to avoid III-V/IV phase separation. As a proof of principle, crystalline AlPSi3 with thickness <900 nm was grown directly, and virtually lattice matched, on Si(100) substrates by combining Al atoms and the well-known P(SiH3)3 molecule as co-reactants using gas-source MBE techniques at temperatures < 600 °C. Intermediate "Al:P(SiH3)3" complexes containing (Al-P)-Si3 cores are presumed to form, and incorporate intact into highly stable diamond-like solid devoid of phase segregation and defects, and a composition with maximal III-V content in which "donor-acceptor" pairs are isolated within an Si matrix. This strategy is generalized to: (i) expand the composition space for this class of materials (ii) grow bulk-like films for detailed comparative characterization and (iii) alloy on the III-V and/or IV sublattice as a means of tuning lattice constants and band gaps. Assembly mechanisms, thermochemistry and key materials properties are elucidated via molecular/solidstate simulation.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages623-634
Number of pages12
Edition9
ISBN (Print)9781607683575
DOIs
StatePublished - 2013
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

ASJC Scopus subject areas

  • General Engineering

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