TY - GEN
T1 - Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors
AU - Chizmeshya, Andrew
AU - Kouvetakis, John
AU - Grzybowski, G.
AU - Beeler, R.
AU - Menendez, Jose
PY - 2013
Y1 - 2013
N2 - A new synthetic strategy for (III-V)y(IV)5-2y materials is introduced to avoid III-V/IV phase separation. As a proof of principle, crystalline AlPSi3 with thickness <900 nm was grown directly, and virtually lattice matched, on Si(100) substrates by combining Al atoms and the well-known P(SiH3)3 molecule as co-reactants using gas-source MBE techniques at temperatures < 600 °C. Intermediate "Al:P(SiH3)3" complexes containing (Al-P)-Si3 cores are presumed to form, and incorporate intact into highly stable diamond-like solid devoid of phase segregation and defects, and a composition with maximal III-V content in which "donor-acceptor" pairs are isolated within an Si matrix. This strategy is generalized to: (i) expand the composition space for this class of materials (ii) grow bulk-like films for detailed comparative characterization and (iii) alloy on the III-V and/or IV sublattice as a means of tuning lattice constants and band gaps. Assembly mechanisms, thermochemistry and key materials properties are elucidated via molecular/solidstate simulation.
AB - A new synthetic strategy for (III-V)y(IV)5-2y materials is introduced to avoid III-V/IV phase separation. As a proof of principle, crystalline AlPSi3 with thickness <900 nm was grown directly, and virtually lattice matched, on Si(100) substrates by combining Al atoms and the well-known P(SiH3)3 molecule as co-reactants using gas-source MBE techniques at temperatures < 600 °C. Intermediate "Al:P(SiH3)3" complexes containing (Al-P)-Si3 cores are presumed to form, and incorporate intact into highly stable diamond-like solid devoid of phase segregation and defects, and a composition with maximal III-V content in which "donor-acceptor" pairs are isolated within an Si matrix. This strategy is generalized to: (i) expand the composition space for this class of materials (ii) grow bulk-like films for detailed comparative characterization and (iii) alloy on the III-V and/or IV sublattice as a means of tuning lattice constants and band gaps. Assembly mechanisms, thermochemistry and key materials properties are elucidated via molecular/solidstate simulation.
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U2 - 10.1149/05009.0623ecst
DO - 10.1149/05009.0623ecst
M3 - Conference contribution
AN - SCOPUS:84885714311
SN - 9781607683575
T3 - ECS Transactions
SP - 623
EP - 634
BT - SiGe, Ge, and Related Compounds 5
PB - Electrochemical Society Inc.
T2 - 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -