TY - GEN
T1 - Nano etching via metal-assisted chemical etching (mace) for through silicon via (tsv) stacked chips application
AU - Wong, C. P.
AU - Li, Liyi
AU - Hildreth, Owen
PY - 2013
Y1 - 2013
N2 - Metal assisted chemical etching (MaCE) is a promising technology for next generation microand nano- semiconductor fabrication, where noble metals are used as catalyst to anisotropically etch into bulk materials in solution. In this study, we report the first silicon vias (SV) with sub-100 nm diameter etched by MaCE. The distinct structure of thus fabricated SVs enables the successful copper filling from the bottom of the vias, which is manifested by scanning electron microscope (SEM) and energy dispersive X-ray spectroscope (EDS). The report demonstrates the applicability of nano-scale interconnection in 3D package from the view of fabrication. Also, this novel approach marks the significance in functional filling of semiconductor for nano-photonic devices as well as template-based synthesis of functional nanomaterials.
AB - Metal assisted chemical etching (MaCE) is a promising technology for next generation microand nano- semiconductor fabrication, where noble metals are used as catalyst to anisotropically etch into bulk materials in solution. In this study, we report the first silicon vias (SV) with sub-100 nm diameter etched by MaCE. The distinct structure of thus fabricated SVs enables the successful copper filling from the bottom of the vias, which is manifested by scanning electron microscope (SEM) and energy dispersive X-ray spectroscope (EDS). The report demonstrates the applicability of nano-scale interconnection in 3D package from the view of fabrication. Also, this novel approach marks the significance in functional filling of semiconductor for nano-photonic devices as well as template-based synthesis of functional nanomaterials.
UR - http://www.scopus.com/inward/record.url?scp=84887642514&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887642514&partnerID=8YFLogxK
U2 - 10.1364/aoee.2013.jsa1a.3
DO - 10.1364/aoee.2013.jsa1a.3
M3 - Conference contribution
AN - SCOPUS:84887642514
SN - 9781557529763
T3 - Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
SP - JSa1A.3
BT - Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
PB - Optical Society of America (OSA)
T2 - Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
Y2 - 25 May 2013 through 26 May 2013
ER -