Nano etching via metal-assisted chemical etching (mace) for through silicon via (tsv) stacked chips application

C. P. Wong, Liyi Li, Owen Hildreth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal assisted chemical etching (MaCE) is a promising technology for next generation microand nano- semiconductor fabrication, where noble metals are used as catalyst to anisotropically etch into bulk materials in solution. In this study, we report the first silicon vias (SV) with sub-100 nm diameter etched by MaCE. The distinct structure of thus fabricated SVs enables the successful copper filling from the bottom of the vias, which is manifested by scanning electron microscope (SEM) and energy dispersive X-ray spectroscope (EDS). The report demonstrates the applicability of nano-scale interconnection in 3D package from the view of fabrication. Also, this novel approach marks the significance in functional filling of semiconductor for nano-photonic devices as well as template-based synthesis of functional nanomaterials.

Original languageEnglish (US)
Title of host publicationNanophotonics, Nanoelectronics and Nanosensor, N3 2013
PublisherOptical Society of America (OSA)
PagesJSa1A.3
ISBN (Print)9781557529763
DOIs
StatePublished - 2013
EventNanophotonics, Nanoelectronics and Nanosensor, N3 2013 - Wuhan, China
Duration: May 25 2013May 26 2013

Publication series

NameNanophotonics, Nanoelectronics and Nanosensor, N3 2013

Other

OtherNanophotonics, Nanoelectronics and Nanosensor, N3 2013
CountryChina
CityWuhan
Period5/25/135/26/13

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

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