N-type doping in electrodeposited Cu2O by Cu diffusion

Kunhee Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Cuprous oxide (Cu2O) is naturally p-type due to a high concentration of Cu vacancies. N-type doping of Cu2O by diffusing Cu atoms into Cu2O is proposed and demonstrated. It is suggested that Cu diffusion in Cu2O annihilates Cu vacancies, leading to Cu interstitials and/or O vacancies which are responsible for the n-type conductivity. The effect of Cu diffusion on structural and electrical properties of Cu2O is investigated in the temperature range of 100-400°C. The resistivity of Cu-doped Cu2O sharply decreases at 350°C and the lowest resistivity of 28 Ω-cm is obtained at annealing temperature of 400°C. A diffusion coefficient of 1.91×10-16 m 2/sec is extracted at 325°C. Photocurrent measurements confirm that Cu-doped Cu2O is indeed n-type.

Original languageEnglish (US)
Title of host publicationPhotovoltaics for the 21st Century 5
Pages103-109
Number of pages7
Edition15
DOIs
StatePublished - Dec 1 2010
Externally publishedYes
EventPhotovoltaics for the 21 Century 5 - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number15
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhotovoltaics for the 21 Century 5 - 216th ECS Meeting
Country/TerritoryAustria
CityVienna
Period10/4/0910/9/09

ASJC Scopus subject areas

  • Engineering(all)

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