N-type doping in electrodeposited Cu2O by Cu diffusion

Kunhee Han; Meng Tao

doi:10.1149/1.3300427

N-type doping in electrodeposited Cu₂O by Cu diffusion

Kunhee Han, Meng Tao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Cuprous oxide (Cu₂O) is naturally p-type due to a high concentration of Cu vacancies. N-type doping of Cu₂O by diffusing Cu atoms into Cu₂O is proposed and demonstrated. It is suggested that Cu diffusion in Cu₂O annihilates Cu vacancies, leading to Cu interstitials and/or O vacancies which are responsible for the n-type conductivity. The effect of Cu diffusion on structural and electrical properties of Cu₂O is investigated in the temperature range of 100-400°C. The resistivity of Cu-doped Cu₂O sharply decreases at 350°C and the lowest resistivity of 28 Ω-cm is obtained at annealing temperature of 400°C. A diffusion coefficient of 1.91×10^-16 m ²/sec is extracted at 325°C. Photocurrent measurements confirm that Cu-doped Cu²O is indeed n-type.

Original language	English (US)
Title of host publication	Photovoltaics for the 21st Century 5
Publisher	Electrochemical Society Inc.
Pages	103-109
Number of pages	7
Edition	15
ISBN (Electronic)	9781566777827
ISBN (Print)	9781566777827
DOIs	https://doi.org/10.1149/1.3300427
State	Published - 2009
Externally published	Yes

Publication series

Name	ECS Transactions
Number	15
Volume	25
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3300427

Cite this

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title = "N-type doping in electrodeposited Cu2O by Cu diffusion",

abstract = "Cuprous oxide (Cu2O) is naturally p-type due to a high concentration of Cu vacancies. N-type doping of Cu2O by diffusing Cu atoms into Cu2O is proposed and demonstrated. It is suggested that Cu diffusion in Cu2O annihilates Cu vacancies, leading to Cu interstitials and/or O vacancies which are responsible for the n-type conductivity. The effect of Cu diffusion on structural and electrical properties of Cu2O is investigated in the temperature range of 100-400°C. The resistivity of Cu-doped Cu2O sharply decreases at 350°C and the lowest resistivity of 28 Ω-cm is obtained at annealing temperature of 400°C. A diffusion coefficient of 1.91×10-16 m 2/sec is extracted at 325°C. Photocurrent measurements confirm that Cu-doped Cu2O is indeed n-type.",

author = "Kunhee Han and Meng Tao",

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series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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AU - Tao, Meng

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N2 - Cuprous oxide (Cu2O) is naturally p-type due to a high concentration of Cu vacancies. N-type doping of Cu2O by diffusing Cu atoms into Cu2O is proposed and demonstrated. It is suggested that Cu diffusion in Cu2O annihilates Cu vacancies, leading to Cu interstitials and/or O vacancies which are responsible for the n-type conductivity. The effect of Cu diffusion on structural and electrical properties of Cu2O is investigated in the temperature range of 100-400°C. The resistivity of Cu-doped Cu2O sharply decreases at 350°C and the lowest resistivity of 28 Ω-cm is obtained at annealing temperature of 400°C. A diffusion coefficient of 1.91×10-16 m 2/sec is extracted at 325°C. Photocurrent measurements confirm that Cu-doped Cu2O is indeed n-type.

AB - Cuprous oxide (Cu2O) is naturally p-type due to a high concentration of Cu vacancies. N-type doping of Cu2O by diffusing Cu atoms into Cu2O is proposed and demonstrated. It is suggested that Cu diffusion in Cu2O annihilates Cu vacancies, leading to Cu interstitials and/or O vacancies which are responsible for the n-type conductivity. The effect of Cu diffusion on structural and electrical properties of Cu2O is investigated in the temperature range of 100-400°C. The resistivity of Cu-doped Cu2O sharply decreases at 350°C and the lowest resistivity of 28 Ω-cm is obtained at annealing temperature of 400°C. A diffusion coefficient of 1.91×10-16 m 2/sec is extracted at 325°C. Photocurrent measurements confirm that Cu-doped Cu2O is indeed n-type.

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