Abstract
Cuprous oxide (Cu2O) is naturally p-type, which has prevented an efficient Cu2O solar cell. n-Type doping of Cu2O is demonstrated during electrochemical deposition by adding a chlorine (Cl) precursor to the aqueous solution. Current-voltage characterization reveals that the resistivity of undoped Cu2O by electrochemical deposition is ∼40 M ωcm, while that of electrochemically doped Cu2O with Cl is significantly reduced to as low as ∼7 ω cm. X-ray diffraction confirms that the films are pure Cu2O. Photocurrent measurements verify that Cl-doped Cu2O is n-type. The solution-based doping method is particularly suitable for low-cost, large-area, and high-throughput fabrication of Cu2O solar cells.
Original language | English (US) |
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Pages (from-to) | H89-H91 |
Journal | Electrochemical and Solid-State Letters |
Volume | 12 |
Issue number | 4 |
DOIs | |
State | Published - 2009 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemical Engineering
- General Materials Science
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering