Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection

Mohammad Najmzadeh; Changhyun Ko; Kedi Wu; Sefaattin Tongay; Junqiao Wu

doi:10.7567/APEX.9.055201

Multilayer ReS₂ lateral p-n homojunction for photoemission and photodetection

Mohammad Najmzadeh, Changhyun Ko, Kedi Wu, Sefaattin Tongay, Junqiao Wu

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this paper, a multilayer ReS₂ p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.

Original language	English (US)
Article number	055201
Journal	Applied Physics Express
Volume	9
Issue number	5
DOIs	https://doi.org/10.7567/APEX.9.055201
State	Published - May 2016

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection",

abstract = "In this paper, a multilayer ReS2 p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.",

author = "Mohammad Najmzadeh and Changhyun Ko and Kedi Wu and Sefaattin Tongay and Junqiao Wu",

note = "Funding Information: This work is supported by ATMI Inc. within the iRice program. The material processing and characterization were supported by the National Science Foundation, No. DMR-1306601. The authors thank I. Bhattacharya and Professor C. J. Chang-Hasnain, UC Berkeley, for support of the optical measurements. Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

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AU - Najmzadeh, Mohammad

AU - Ko, Changhyun

AU - Wu, Kedi

AU - Tongay, Sefaattin

AU - Wu, Junqiao

N1 - Funding Information: This work is supported by ATMI Inc. within the iRice program. The material processing and characterization were supported by the National Science Foundation, No. DMR-1306601. The authors thank I. Bhattacharya and Professor C. J. Chang-Hasnain, UC Berkeley, for support of the optical measurements. Publisher Copyright: © 2016 The Japan Society of Applied Physics.

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N2 - In this paper, a multilayer ReS2 p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.

AB - In this paper, a multilayer ReS2 p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.

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Multilayer ReS₂ lateral p-n homojunction for photoemission and photodetection

Abstract

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