Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection

Mohammad Najmzadeh, Changhyun Ko, Kedi Wu, Sefaattin Tongay, Junqiao Wu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this paper, a multilayer ReS2 p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.

Original languageEnglish (US)
Article number055201
JournalApplied Physics Express
Volume9
Issue number5
DOIs
StatePublished - May 1 2016

Fingerprint

homojunctions
Photoemission
Multilayers
photoelectric emission
Photodetectors
photometers
Lighting
illumination
Nanoparticles
nanoparticles
Lasers
room temperature
Substrates
lasers
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection. / Najmzadeh, Mohammad; Ko, Changhyun; Wu, Kedi; Tongay, Sefaattin; Wu, Junqiao.

In: Applied Physics Express, Vol. 9, No. 5, 055201, 01.05.2016.

Research output: Contribution to journalArticle

Najmzadeh, Mohammad ; Ko, Changhyun ; Wu, Kedi ; Tongay, Sefaattin ; Wu, Junqiao. / Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection. In: Applied Physics Express. 2016 ; Vol. 9, No. 5.
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