Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection

Mohammad Najmzadeh, Changhyun Ko, Kedi Wu, Sefaattin Tongay, Junqiao Wu

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Abstract

In this paper, a multilayer ReS2 p-n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p-n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.

Original languageEnglish (US)
Article number055201
JournalApplied Physics Express
Volume9
Issue number5
DOIs
StatePublished - May 2016

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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