Abstract

We have studied the material properties and device performance of InAs/GaAs quantum dot solar cells (QDSCs) made using three different QD growth modes: Stranski-Krastanov (S-K), quasi-monolayer (QML), and sub-monolayer (SML) growth modes. All QDSCs show an extended external quantum efficiency (EQE) at near infrared wavelengths of 950-1070nm from the QD absorption. Compared to the S-K and SML QDSCs, the QML QDSC with a higher strain exhibits a poor EQE response in the wavelength region of 300-880nm due to increased non-radiative recombination. The conversion efficiency of the S-K and SML QDSCs exceeds that of the reference cell (13.4%) without QDs due to an enhanced photocurrent (>16% increase) produced by the silicon doped QD stacks. However, as expected from the EQE of the QML QDSC, the increase of strain-induced crystalline defects greatly degrades the photocurrent and open-circuit voltage, leading to the lowest conversion efficiency (8.9%).

Original languageEnglish (US)
Article number222104
JournalApplied Physics Letters
Volume106
Issue number22
DOIs
StatePublished - Jun 1 2015

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solar cells
quantum dots
quantum efficiency
photocurrents
open circuit voltage
wavelengths
defects
silicon
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Multi-stacked InAs/GaAs quantum dots grown with different growth modes for quantum dot solar cells. / Kim, Yeongho; Ban, Keun Yong; Honsberg, Christiana.

In: Applied Physics Letters, Vol. 106, No. 22, 222104, 01.06.2015.

Research output: Contribution to journalArticle

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