Abstract

This paper discusses a multi-scale device modeling scheme developed at Arizona State University for calculating the self-heating effects in nano-scale silicon devices. The first level of multi-scale modeling involves coupling of a two dimensional particle based device simulator, that uses the Monte Carlo (MC) method to simulate the transport characteristics of electrons in the device, to a self-consistent Poisson's equation solver for the charge distribution inside the device, and the energy balance equation solver for acoustic and optical phonon bath to account for the self-heating effects. At the next level, the device simulator is coupled to a Silvaco model which solves for thermal transport in circuit level interconnects. As such, the proposed and implemented multi-scale thermal modeling scheme forms a complete tool capable of analyzing thermal effects on an integrated circuit (IC). Some preliminary results from the scheme are shown that depict a good match with the experimental data for the sensor lattice temperature.

Original languageEnglish (US)
Title of host publicationIEEE-NANO 2015 - 15th International Conference on Nanotechnology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1461-1464
Number of pages4
ISBN (Print)9781467381550
DOIs
StatePublished - Jan 20 2016
Event15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
Duration: Jul 27 2015Jul 30 2015

Other

Other15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
CountryItaly
CityRome
Period7/27/157/30/15

Keywords

  • Multi-scale modeling
  • Nanoscale devices
  • Self-heating effects
  • Silicon
  • Thermal modeling

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films

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