MOVPE growth of GaN on Si(1 1 1) substrates

Armin Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, M. Kamp, J. Christen, Fernando Ponce, E. Kohn, A. Krost

Research output: Contribution to journalArticle

116 Citations (Scopus)

Abstract

Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.

Original languageEnglish (US)
Pages (from-to)556-562
Number of pages7
JournalJournal of Crystal Growth
Volume248
Issue numberSUPPL.
DOIs
StatePublished - Feb 2003

Fingerprint

Metallorganic vapor phase epitaxy
cracks
Cracks
interlayers
Substrates
masking
Temperature
Carrier concentration
Monolayers
Transistors
emitters
transistors
Vapors
vapor phases
output
room temperature

Keywords

  • A1. Si(1 1 1) substrates
  • A3. Metalorganic vapor phase epitaxy
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dadgar, A., Poschenrieder, M., Bläsing, J., Contreras, O., Bertram, F., Riemann, T., ... Krost, A. (2003). MOVPE growth of GaN on Si(1 1 1) substrates. Journal of Crystal Growth, 248(SUPPL.), 556-562. https://doi.org/10.1016/S0022-0248(02)01894-8

MOVPE growth of GaN on Si(1 1 1) substrates. / Dadgar, Armin; Poschenrieder, M.; Bläsing, J.; Contreras, O.; Bertram, F.; Riemann, T.; Reiher, A.; Kunze, M.; Daumiller, I.; Krtschil, A.; Diez, A.; Kaluza, A.; Modlich, A.; Kamp, M.; Christen, J.; Ponce, Fernando; Kohn, E.; Krost, A.

In: Journal of Crystal Growth, Vol. 248, No. SUPPL., 02.2003, p. 556-562.

Research output: Contribution to journalArticle

Dadgar, A, Poschenrieder, M, Bläsing, J, Contreras, O, Bertram, F, Riemann, T, Reiher, A, Kunze, M, Daumiller, I, Krtschil, A, Diez, A, Kaluza, A, Modlich, A, Kamp, M, Christen, J, Ponce, F, Kohn, E & Krost, A 2003, 'MOVPE growth of GaN on Si(1 1 1) substrates', Journal of Crystal Growth, vol. 248, no. SUPPL., pp. 556-562. https://doi.org/10.1016/S0022-0248(02)01894-8
Dadgar A, Poschenrieder M, Bläsing J, Contreras O, Bertram F, Riemann T et al. MOVPE growth of GaN on Si(1 1 1) substrates. Journal of Crystal Growth. 2003 Feb;248(SUPPL.):556-562. https://doi.org/10.1016/S0022-0248(02)01894-8
Dadgar, Armin ; Poschenrieder, M. ; Bläsing, J. ; Contreras, O. ; Bertram, F. ; Riemann, T. ; Reiher, A. ; Kunze, M. ; Daumiller, I. ; Krtschil, A. ; Diez, A. ; Kaluza, A. ; Modlich, A. ; Kamp, M. ; Christen, J. ; Ponce, Fernando ; Kohn, E. ; Krost, A. / MOVPE growth of GaN on Si(1 1 1) substrates. In: Journal of Crystal Growth. 2003 ; Vol. 248, No. SUPPL. pp. 556-562.
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AU - Poschenrieder, M.

AU - Bläsing, J.

AU - Contreras, O.

AU - Bertram, F.

AU - Riemann, T.

AU - Reiher, A.

AU - Kunze, M.

AU - Daumiller, I.

AU - Krtschil, A.

AU - Diez, A.

AU - Kaluza, A.

AU - Modlich, A.

AU - Kamp, M.

AU - Christen, J.

AU - Ponce, Fernando

AU - Kohn, E.

AU - Krost, A.

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