TY - JOUR
T1 - MOVPE growth of GaN on Si(1 1 1) substrates
AU - Dadgar, Armin
AU - Poschenrieder, M.
AU - Bläsing, J.
AU - Contreras, O.
AU - Bertram, F.
AU - Riemann, T.
AU - Reiher, A.
AU - Kunze, M.
AU - Daumiller, I.
AU - Krtschil, A.
AU - Diez, A.
AU - Kaluza, A.
AU - Modlich, A.
AU - Kamp, M.
AU - Christen, J.
AU - Ponce, Fernando
AU - Kohn, E.
AU - Krost, A.
N1 - Funding Information:
Part of this work is supported by the Deutsche Forschungsgemeinschaft. We acknowledge the fruitful cooperation with D. Bimberg and A. Strittmatter from TU-Berlin.
PY - 2003/2
Y1 - 2003/2
N2 - Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.
AB - Metalorganic chemical vapor phase deposition of thick, crack-free GaN on Si can be performed either by patterning of the substrate and selective growth or by low-temperature (LT) AlN interlayers enabling very thick GaN layers. A reduction in dislocation density from 1010 to 109 cm-2 is observed for LT-AlN interlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth. Crack-free AlGaN/GaN transistor structures show high room temperature mobilities of 1590 cm2/Vs at 6.7 × 1012cm-2 sheet carrier concentration. Thick crack-free light emitters have a maximum output power of 0.42 mW at 498 nm and 20 mA.
KW - A1. Si(1 1 1) substrates
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. GaN
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U2 - 10.1016/S0022-0248(02)01894-8
DO - 10.1016/S0022-0248(02)01894-8
M3 - Conference article
AN - SCOPUS:0037291309
SN - 0022-0248
VL - 248
SP - 556
EP - 562
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - SUPPL.
T2 - Proceedings of the eleventh international conference on MOVPE XI
Y2 - 3 June 2002 through 7 June 2002
ER -