MOSFET modeling for 45nm and beyond

Yu Cao, Colin McAndrew

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Scopus citations

Abstract

Compact MOSFET models are a critical link between technology and design. The inexorable reduction in supply voltage and geometry to 45nm and below adds or emphasizes physical effects not important in the past, and so continues to expand the requirements for MOSFET models. At and below 45nm, process variations, reliability, proximity effects, high-k gate materials, and non-classical device structures all challenge modeling. This tutorial presents fundamentals and evolution of compact MOSFET models, and techniques to address the new challenges.

Original languageEnglish (US)
Title of host publication2007 IEEE/ACM International Conference on Computer-Aided Design, ICCAD
Pages638-643
Number of pages6
DOIs
StatePublished - Dec 1 2007
Event2007 IEEE/ACM International Conference on Computer-Aided Design, ICCAD - San Jose, CA, United States
Duration: Nov 4 2007Nov 8 2007

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
ISSN (Print)1092-3152

Other

Other2007 IEEE/ACM International Conference on Computer-Aided Design, ICCAD
CountryUnited States
CitySan Jose, CA
Period11/4/0711/8/07

ASJC Scopus subject areas

  • Software
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

Fingerprint Dive into the research topics of 'MOSFET modeling for 45nm and beyond'. Together they form a unique fingerprint.

  • Cite this

    Cao, Y., & McAndrew, C. (2007). MOSFET modeling for 45nm and beyond. In 2007 IEEE/ACM International Conference on Computer-Aided Design, ICCAD (pp. 638-643). [4397337] (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD). https://doi.org/10.1109/ICCAD.2007.4397337