MoS <inf>2</inf> heterojunctions by thickness modulation

Mahmut Tosun, Deyi Fu, Sujay B. Desai, Changhyun Ko, Jeong Seuk Kang, Der Hsien Lien, Mohammad Najmzadeh, Sefaattin Tongay, Junqiao Wu, Ali Javey

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Abstract

In this work, we report lateral heterojunction formation in as-exfoliated MoS 2 flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS 2 junctions with important implications for exploring novel optoelectronic devices.

Original languageEnglish (US)
Article number10990
JournalScientific Reports
Volume5
DOIs
Publication statusPublished - Jun 30 2015
Externally publishedYes

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Tosun, M., Fu, D., Desai, S. B., Ko, C., Seuk Kang, J., Lien, D. H., ... Javey, A. (2015). MoS <inf>2</inf> heterojunctions by thickness modulation. Scientific Reports, 5, [10990]. https://doi.org/10.1038/srep10990