MOS gated Si:SiGe quantum wells formed by anodic oxidation

J. C. Yeoh, P. W. Green, Trevor Thornton, S. Kaya, K. Fobelets, J. M. Fernández

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current-voltage and capacitance-voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-temperature measurements of the electron mobility and sheet density in the quantum well.

Original languageEnglish (US)
Pages (from-to)1442-1445
Number of pages4
JournalSemiconductor Science and Technology
Volume13
Issue number12
DOIs
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yeoh, J. C., Green, P. W., Thornton, T., Kaya, S., Fobelets, K., & Fernández, J. M. (1998). MOS gated Si:SiGe quantum wells formed by anodic oxidation. Semiconductor Science and Technology, 13(12), 1442-1445. https://doi.org/10.1088/0268-1242/13/12/020