Morphology of Si(100) surfaces exposed to a remote H plasma

J. S. Montgomery, T. P. Schneider, R. J. Carter, J. P. Barnak, Y. L. Chen, J. R. Hauser, Robert Nemanich

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

This study addresses the formation of roughness and near surface defects on Si(100) surfaces that are exposed to a remotely excited H plasma. The remote H plasma processing can be employed for in situ wafer cleaning. Atomic force microscopy, transmission electron microscopy, and residual gas analysis are used to measure the surface roughness, the near surface defects, and the etching, respectively. For remote H plasma exposures at substrate temperatures ≤300°C, etching is observed along with a significant increase in the surface roughness and the formation of platelet defects in the near surface region. As the substrate temperature is increased to above 450°C, etching is significantly reduced and no subsurface defects or increases in surface roughness are observed.

Original languageEnglish (US)
Pages (from-to)2194
Number of pages1
JournalApplied Physics Letters
Volume67
StatePublished - 1994
Externally publishedYes

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surface roughness
etching
surface defects
gas analysis
residual gas
defects
platelets
cleaning
roughness
atomic force microscopy
wafers
transmission electron microscopy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Montgomery, J. S., Schneider, T. P., Carter, R. J., Barnak, J. P., Chen, Y. L., Hauser, J. R., & Nemanich, R. (1994). Morphology of Si(100) surfaces exposed to a remote H plasma. Applied Physics Letters, 67, 2194.

Morphology of Si(100) surfaces exposed to a remote H plasma. / Montgomery, J. S.; Schneider, T. P.; Carter, R. J.; Barnak, J. P.; Chen, Y. L.; Hauser, J. R.; Nemanich, Robert.

In: Applied Physics Letters, Vol. 67, 1994, p. 2194.

Research output: Contribution to journalArticle

Montgomery, JS, Schneider, TP, Carter, RJ, Barnak, JP, Chen, YL, Hauser, JR & Nemanich, R 1994, 'Morphology of Si(100) surfaces exposed to a remote H plasma', Applied Physics Letters, vol. 67, pp. 2194.
Montgomery JS, Schneider TP, Carter RJ, Barnak JP, Chen YL, Hauser JR et al. Morphology of Si(100) surfaces exposed to a remote H plasma. Applied Physics Letters. 1994;67:2194.
Montgomery, J. S. ; Schneider, T. P. ; Carter, R. J. ; Barnak, J. P. ; Chen, Y. L. ; Hauser, J. R. ; Nemanich, Robert. / Morphology of Si(100) surfaces exposed to a remote H plasma. In: Applied Physics Letters. 1994 ; Vol. 67. pp. 2194.
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