Morphology of Au/GaAs interfaces

Z. Liliental-Weber, J. Washburn, Nathan Newman, W. E. Spicer, E. R. Weber

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

Original languageEnglish (US)
Pages (from-to)1514-1516
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number22
DOIs
StatePublished - 1986
Externally publishedYes

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diodes
ultrahigh vacuum
gold
air
electron microscopy
chemistry
preparation
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Liliental-Weber, Z., Washburn, J., Newman, N., Spicer, W. E., & Weber, E. R. (1986). Morphology of Au/GaAs interfaces. Applied Physics Letters, 49(22), 1514-1516. https://doi.org/10.1063/1.97318

Morphology of Au/GaAs interfaces. / Liliental-Weber, Z.; Washburn, J.; Newman, Nathan; Spicer, W. E.; Weber, E. R.

In: Applied Physics Letters, Vol. 49, No. 22, 1986, p. 1514-1516.

Research output: Contribution to journalArticle

Liliental-Weber, Z, Washburn, J, Newman, N, Spicer, WE & Weber, ER 1986, 'Morphology of Au/GaAs interfaces', Applied Physics Letters, vol. 49, no. 22, pp. 1514-1516. https://doi.org/10.1063/1.97318
Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces. Applied Physics Letters. 1986;49(22):1514-1516. https://doi.org/10.1063/1.97318
Liliental-Weber, Z. ; Washburn, J. ; Newman, Nathan ; Spicer, W. E. ; Weber, E. R. / Morphology of Au/GaAs interfaces. In: Applied Physics Letters. 1986 ; Vol. 49, No. 22. pp. 1514-1516.
@article{ed6fc881cb204dab88bcb88f2a8faf1e,
title = "Morphology of Au/GaAs interfaces",
abstract = "The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.",
author = "Z. Liliental-Weber and J. Washburn and Nathan Newman and Spicer, {W. E.} and Weber, {E. R.}",
year = "1986",
doi = "10.1063/1.97318",
language = "English (US)",
volume = "49",
pages = "1514--1516",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Morphology of Au/GaAs interfaces

AU - Liliental-Weber, Z.

AU - Washburn, J.

AU - Newman, Nathan

AU - Spicer, W. E.

AU - Weber, E. R.

PY - 1986

Y1 - 1986

N2 - The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

AB - The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

UR - http://www.scopus.com/inward/record.url?scp=3142590107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142590107&partnerID=8YFLogxK

U2 - 10.1063/1.97318

DO - 10.1063/1.97318

M3 - Article

VL - 49

SP - 1514

EP - 1516

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -