Morphology of Au/GaAs interfaces

Z. Liliental-Weber, J. Washburn, N. Newman, W. E. Spicer, E. R. Weber

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

The interface morphology of gold contacts on ultrahigh vacuum (UHV) cleaved, air-exposed, and chemically prepared GaAs surfaces has been studied by electron microscopy. Diodes formed on atomically clean cleaved (110) GaAs surfaces, subsequently annealed at 405°C, were found to have flat interfaces. In contrast, diodes formed on air-exposed and chemically prepared GaAs surfaces, also subsequently annealed at 405°C, were found to have rough and uneven interfaces with a large number of protrusions extending into the semiconductor. They have different orientation relationships with the GaAs substrate than the diodes prepared in situ in UHV. The results of this study show that, upon annealing, the interfacial chemistry and morphology depend strongly on the surface preparation of GaAs before gold deposition.

Original languageEnglish (US)
Pages (from-to)1514-1516
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number22
DOIs
StatePublished - Dec 1 1986
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Liliental-Weber, Z., Washburn, J., Newman, N., Spicer, W. E., & Weber, E. R. (1986). Morphology of Au/GaAs interfaces. Applied Physics Letters, 49(22), 1514-1516. https://doi.org/10.1063/1.97318