Morphological transition of Ge islands on Si(001) grown by LPCVD

Michael Goryll, L. Vescan, H. Lüth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700°C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages205-211
Number of pages7
Volume570
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications' - San Frnacisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

Other

OtherProceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications'
CitySan Frnacisco, CA, USA
Period4/5/994/8/99

Fingerprint

Domes
Photoluminescence
Vapor phase epitaxy
Coarsening
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Goryll, M., Vescan, L., & Lüth, H. (1999). Morphological transition of Ge islands on Si(001) grown by LPCVD. In Materials Research Society Symposium - Proceedings (Vol. 570, pp. 205-211). Materials Research Society.

Morphological transition of Ge islands on Si(001) grown by LPCVD. / Goryll, Michael; Vescan, L.; Lüth, H.

Materials Research Society Symposium - Proceedings. Vol. 570 Materials Research Society, 1999. p. 205-211.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Goryll, M, Vescan, L & Lüth, H 1999, Morphological transition of Ge islands on Si(001) grown by LPCVD. in Materials Research Society Symposium - Proceedings. vol. 570, Materials Research Society, pp. 205-211, Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications', San Frnacisco, CA, USA, 4/5/99.
Goryll M, Vescan L, Lüth H. Morphological transition of Ge islands on Si(001) grown by LPCVD. In Materials Research Society Symposium - Proceedings. Vol. 570. Materials Research Society. 1999. p. 205-211
Goryll, Michael ; Vescan, L. ; Lüth, H. / Morphological transition of Ge islands on Si(001) grown by LPCVD. Materials Research Society Symposium - Proceedings. Vol. 570 Materials Research Society, 1999. pp. 205-211
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