Abstract
Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700°C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.
| Original language | English (US) |
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| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 205-211 |
| Number of pages | 7 |
| Volume | 570 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications' - San Frnacisco, CA, USA Duration: Apr 5 1999 → Apr 8 1999 |
Other
| Other | Proceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications' |
|---|---|
| City | San Frnacisco, CA, USA |
| Period | 4/5/99 → 4/8/99 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials