Morphological transition of Ge islands on Si(001) grown by LPCVD

Michael Goryll, L. Vescan, H. Lüth

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700°C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages205-211
Number of pages7
Volume570
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications' - San Frnacisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

Other

OtherProceedings of the 1999 MRS Spring Meeting - Symposium on 'Epitaxial Growth-Principles and Applications'
CitySan Frnacisco, CA, USA
Period4/5/994/8/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Morphological transition of Ge islands on Si(001) grown by LPCVD'. Together they form a unique fingerprint.

  • Cite this

    Goryll, M., Vescan, L., & Lüth, H. (1999). Morphological transition of Ge islands on Si(001) grown by LPCVD. In Materials Research Society Symposium - Proceedings (Vol. 570, pp. 205-211). Materials Research Society.