Morphological evolution during Ge/Si(100) heteroepitaxy

Loren I. Espada, Sergio Chaparro, Jose Aguilar, Melissa Dorrance, Michael McKay, Ken Payne, Jeffery Drucker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the morphological evolution of islanded Ge/Si(100) samples formed by > 3 monolayer (ML) Ge deposition. Ge was deposited onto Si(100) surfaces cleaned by flash desorption of the native oxide at rates near 1/2 ML per minute. Growths were performed in an ultra-high vacuum system with a base pressure of < 10 -9 Torr. Substrate temperature during growth was 500 °C. Post-deposition processing ranged from no additional treatment to 1 hour at 560 °C anneals. Samples removed from the growth chamber were processed using standard transmission electron microscopy (TEM) specimen preparation techniques and characterized using plan-view TEM. Micrographs were computer analyzed to generate island size distributions (histograms of island size). These size distributions fall into general classes. First, samples with only coherent Ge islands exhibit relatively narrow size distributions. Secondly samples with both coherent and incoherent islands presented bi-modal size distributions with coherent islands populating the smaller radii. These results will be discussed in the context of a model which includes elastic as well as surface and interface energies as driving forces for ripening.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages419-424
Number of pages6
Volume399
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 27 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/27/9512/1/95

Fingerprint

Epitaxial growth
Monolayers
Transmission electron microscopy
Specimen preparation
Ultrahigh vacuum
Growth temperature
Oxides
Desorption
Substrates
Processing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Espada, L. I., Chaparro, S., Aguilar, J., Dorrance, M., McKay, M., Payne, K., & Drucker, J. (1996). Morphological evolution during Ge/Si(100) heteroepitaxy. In Materials Research Society Symposium - Proceedings (Vol. 399, pp. 419-424). Materials Research Society.

Morphological evolution during Ge/Si(100) heteroepitaxy. / Espada, Loren I.; Chaparro, Sergio; Aguilar, Jose; Dorrance, Melissa; McKay, Michael; Payne, Ken; Drucker, Jeffery.

Materials Research Society Symposium - Proceedings. Vol. 399 Materials Research Society, 1996. p. 419-424.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Espada, LI, Chaparro, S, Aguilar, J, Dorrance, M, McKay, M, Payne, K & Drucker, J 1996, Morphological evolution during Ge/Si(100) heteroepitaxy. in Materials Research Society Symposium - Proceedings. vol. 399, Materials Research Society, pp. 419-424, Proceedings of the 1995 MRS Fall Meeting, Boston, MA, USA, 11/27/95.
Espada LI, Chaparro S, Aguilar J, Dorrance M, McKay M, Payne K et al. Morphological evolution during Ge/Si(100) heteroepitaxy. In Materials Research Society Symposium - Proceedings. Vol. 399. Materials Research Society. 1996. p. 419-424
Espada, Loren I. ; Chaparro, Sergio ; Aguilar, Jose ; Dorrance, Melissa ; McKay, Michael ; Payne, Ken ; Drucker, Jeffery. / Morphological evolution during Ge/Si(100) heteroepitaxy. Materials Research Society Symposium - Proceedings. Vol. 399 Materials Research Society, 1996. pp. 419-424
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