Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition

L. Torrison, J. Tolle, David Smith, C. Poweleit, Jose Menendez, M. M. Mitan, Terry Alford, John Kouvetakis

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Morphological and optical properties of silicon nanostructure imbedded in silica and silicon nitride films grown by single source chemical vapor deposition (CVD) were analyzed. Growth reactions of the single source precursors in a ultrahigh vacuum (UHV)-CVD reactor yielded amorphous films. Room temperature photoluminescence (PL) studies showed that nanocrystals emit light in visible spectral region between 580 and 650 nm.

Original languageEnglish (US)
Pages (from-to)7475-7480
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number12
DOIs
StatePublished - Dec 15 2002

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vapor deposition
optical properties
silicon nitrides
ultrahigh vacuum
nitrides
nanocrystals
reactors
silicon dioxide
photoluminescence
silicon
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition. / Torrison, L.; Tolle, J.; Smith, David; Poweleit, C.; Menendez, Jose; Mitan, M. M.; Alford, Terry; Kouvetakis, John.

In: Journal of Applied Physics, Vol. 92, No. 12, 15.12.2002, p. 7475-7480.

Research output: Contribution to journalArticle

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