Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures

B. Zorman, S. Krishnan, Dragica Vasileska, J. Xu, M. Van Schilfgaarde

Abstract

We present an ab-initio band-structure procedure that can be applied for holes in Monte Carlo simulations of transistors with strained alloyed channels.

Original languageEnglish (US)
Title of host publication2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
EditorsM. Laudon, B. Romanowicz
Pages76-79
Number of pages4
Publication statusPublished - 2005
Event2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
Duration: May 8 2005May 12 2005

Other

Other2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
CountryUnited States
CityAnaheim, CA
Period5/8/055/12/05

Keywords

  • Ab-Initio
  • Alloys
  • Device Simulation
  • Monte Carlo

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Zorman, B., Krishnan, S., Vasileska, D., Xu, J., & Van Schilfgaarde, M. (2005). Monte Carlo transport calculations of strained SiGe heterostructures from ab-initio band-structures. In M. Laudon, & B. Romanowicz (Eds.), 2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings (pp. 76-79)