Monte Carlo study of the transient expansion of photogenerated plasmas in bulk semiconductors: Nonequilibrium phonon effects

R. P. Joshi, Kong-Thon Tsen, D. K. Ferry

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We examine the transient expansion of the photogenerated electron-hole plasma in semiconductors with the ensemble Monte Carlo technique. A high photoexcitation energy is used to study the nonequilibrium optical-phonon effects, with both their temporal and spatial dependences being included for the first time. Specific numerical calculations within the picosecond regime are given for InP. Our results demonstrate that the nonequilibrium phonons significantly enhance the expansion of the plasma during the first few picoseconds, and change the spatial-carrier-distribution profiles.

Original languageEnglish (US)
Pages (from-to)9899-9906
Number of pages8
JournalPhysical Review B
Volume41
Issue number14
DOIs
StatePublished - 1990

Fingerprint

Semiconductor materials
Plasmas
expansion
Photoexcitation
Phonons
photoexcitation
phonons
Electrons
profiles
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Monte Carlo study of the transient expansion of photogenerated plasmas in bulk semiconductors : Nonequilibrium phonon effects. / Joshi, R. P.; Tsen, Kong-Thon; Ferry, D. K.

In: Physical Review B, Vol. 41, No. 14, 1990, p. 9899-9906.

Research output: Contribution to journalArticle

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