MONTE CARLO STUDY OF Si(111) SURFACE OXIDATION.

S. E. Goodnick, W. Porod, R. O. Grondin, S. M. Goodnick, C. W. Wilmsen, D. K. Ferry

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

A theoretical study of the initial oxidation stages of Si(111) surfaces is undertaken. A Monte Carlo simulation is used to study the individual surface processes that have been suggested in the literature. The relative importance of these mechanisms for the chemical composition of the oxide layer as well as for the initial stages of the formation of SiO//x is investigated.

Original languageEnglish (US)
Pages (from-to)767-772
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number3
DOIs
StatePublished - Jan 1 1983
EventProc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA
Duration: Jan 25 1983Jan 27 1983

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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