Abstract
A theoretical study of the initial oxidation stages of Si(111) surfaces is undertaken. A Monte Carlo simulation is used to study the individual surface processes that have been suggested in the literature. The relative importance of these mechanisms for the chemical composition of the oxide layer as well as for the initial stages of the formation of SiO//x is investigated.
Original language | English (US) |
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Pages (from-to) | 767-772 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 1 |
Issue number | 3 |
DOIs | |
State | Published - Jan 1 1983 |
Event | Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA Duration: Jan 25 1983 → Jan 27 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering