We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering