Monte Carlo study of hot electrons in quantum wells

P. Lugli, Stephen Goodnick, F. Koch

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.

Original languageEnglish (US)
Pages (from-to)335-338
Number of pages4
JournalSuperlattices and Microstructures
Volume2
Issue number4
DOIs
StatePublished - 1986
Externally publishedYes

Fingerprint

Hot electrons
hot electrons
Semiconductor quantum wells
Doping (additives)
Modulation
quantum wells
Impurities
modulation doping
impurities
square wells
Carrier concentration
aluminum gallium arsenides
Scattering
modulation
output
scattering
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Monte Carlo study of hot electrons in quantum wells. / Lugli, P.; Goodnick, Stephen; Koch, F.

In: Superlattices and Microstructures, Vol. 2, No. 4, 1986, p. 335-338.

Research output: Contribution to journalArticle

@article{27280b090433493ebfdad96c439b05da,
title = "Monte Carlo study of hot electrons in quantum wells",
abstract = "We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.",
author = "P. Lugli and Stephen Goodnick and F. Koch",
year = "1986",
doi = "10.1016/0749-6036(86)90043-1",
language = "English (US)",
volume = "2",
pages = "335--338",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4",

}

TY - JOUR

T1 - Monte Carlo study of hot electrons in quantum wells

AU - Lugli, P.

AU - Goodnick, Stephen

AU - Koch, F.

PY - 1986

Y1 - 1986

N2 - We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.

AB - We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.

UR - http://www.scopus.com/inward/record.url?scp=0022905848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022905848&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(86)90043-1

DO - 10.1016/0749-6036(86)90043-1

M3 - Article

AN - SCOPUS:0022905848

VL - 2

SP - 335

EP - 338

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 4

ER -