TY - JOUR
T1 - Monte Carlo study of hot electrons in quantum wells
AU - Lugli, P.
AU - Goodnick, S.
AU - Koch, F.
N1 - Funding Information:
Acknowledgemen-t The authors thankA . Zrenner and M. Zachauf or useful discussions. This work was partially supportedb y the Alexander von Humboldfto undationa nd the ERO.
PY - 1986
Y1 - 1986
N2 - We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.
AB - We have performed an ensemble Monte Carlo calculation of the high field response at 77 K of two different two-dimensional systems, one a modulation doped (MD) single square well of GaAs/AlGaAs and the other a δ-doping layer formed by a sheet of donor impurities embedded in bulk GaAs. Results of this calculation show a reduced low field mobility and a decrease in the transient overshoot velocity in the δ-doping versus MD system due to the effect of impurity scattering. At high fields, however, the steady state saturated drift velocities appear to be similar in the two systems. Because of the higher carrier density, the performance of short-channel devices based on the δ-layer will be advantageous where high output currents are necessary.
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U2 - 10.1016/0749-6036(86)90043-1
DO - 10.1016/0749-6036(86)90043-1
M3 - Article
AN - SCOPUS:0022905848
SN - 0749-6036
VL - 2
SP - 335
EP - 338
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
IS - 4
ER -