Abstract
A Monte Carlo study of high-field electronic transport in silicon dioxide is undertaken. Contrary to previous theoretical studies, we do not model the electronic structure by a single free-electron-like band. Our model accounts for a set of satellite valleys which contribute density of states needed for effective scattering at a few electronvolts. We find that the electronic distribution is stable for fields on the order of 10 MV/cm.
Original language | English (US) |
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Pages (from-to) | 1189-1191 |
Number of pages | 3 |
Journal | Physical Review Letters |
Volume | 54 |
Issue number | 11 |
DOIs | |
State | Published - 1985 |
ASJC Scopus subject areas
- General Physics and Astronomy