Abstract
Experimental Raman spectroscopy studies, performed by two different groups, to measure the relative strength of the polar modes in Al xGa 1-xAs differed in that one showed a linear behavior with the Al concentration while the other showed a non-monotonic behavior. We have used an ensemble Monte Carlo code to study this system. It is found that the excitation energy and the electron concentration all contribute to the experimental discrepancies, while the excitation pulse width had little effect on the measured relative strength of the Al-mode. Apparently the relative strength of the Al-mode scattering is density dependent for x≥0.25.
| Original language | English (US) |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 225-234 |
| Number of pages | 10 |
| Volume | 3940 |
| State | Published - 2000 |
| Event | Ultrafast Phenomena in Semiconductors IV - San Jose, CA, USA Duration: Jan 27 2000 → Jan 28 2000 |
Other
| Other | Ultrafast Phenomena in Semiconductors IV |
|---|---|
| City | San Jose, CA, USA |
| Period | 1/27/00 → 1/28/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics