Monte Carlo simulations of high field transport in electroluminescent devices

Manfred Dür, Stephen Goodnick, Martin Reigrotzki, Ronald Redmer

Research output: Contribution to journalArticlepeer-review

Abstract

High field transport in phosphor materials is an essential element of thin film electroluminescent device performance. Due to the high accelerating fields in these structures (1-3 MV/cm), a complete description of transport under high field conditions utilizing information on the full band structure of the material is critical to understand the light emission process due to impact excitation of luminescent impurities. Here we investigate the role of band structure for ZnS, GaN, and SrS based on empirical pseudopotential calculations to study its effect on the high field energy distribution of conduction band electrons.

Original languageEnglish (US)
Pages (from-to)401-405
Number of pages5
JournalVLSI Design
Volume8
Issue number1-4
DOIs
StatePublished - 1998

Keywords

  • GaN
  • High field transport
  • Monte Carlo method
  • SrS
  • ZnS

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

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