Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells

S. M. Goodnick; P. Lugli

doi:10.1016/0749-6036(89)90385-6

Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells

S. M. Goodnick, P. Lugli

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation. In the present work we model a single quantum well electron system with the inclusion of intra- and intersubband carrier-carrier scattering and nonequilibrium polar optical phonons. Simulated results with and without these basic mechanisms show that the experimentally measured long time constant pile-up of carriers in upper subbands in wide quantum wells appears to be associated with the thermal tail of the total carrier distribution function which remains hot for long times after the pump pulse due to hot phonon effects.

Original language	English (US)
Pages (from-to)	561-563
Number of pages	3
Journal	Superlattices and Microstructures
Volume	5
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(89)90385-6
State	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(89)90385-6

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title = "Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells",

abstract = "We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation. In the present work we model a single quantum well electron system with the inclusion of intra- and intersubband carrier-carrier scattering and nonequilibrium polar optical phonons. Simulated results with and without these basic mechanisms show that the experimentally measured long time constant pile-up of carriers in upper subbands in wide quantum wells appears to be associated with the thermal tail of the total carrier distribution function which remains hot for long times after the pump pulse due to hot phonon effects.",

author = "Goodnick, {S. M.} and P. Lugli",

note = "Funding Information: Acknowledgement - The authors would like to thank D. Oberli and J. Shah for useful discussions related to this work. This work was partially supported by the Office of Naval Research.",

year = "1989",

doi = "10.1016/0749-6036(89)90385-6",

language = "English (US)",

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pages = "561--563",

journal = "Superlattices and Microstructures",

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publisher = "Academic Press Inc.",

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T1 - Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells

AU - Goodnick, S. M.

AU - Lugli, P.

N1 - Funding Information: Acknowledgement - The authors would like to thank D. Oberli and J. Shah for useful discussions related to this work. This work was partially supported by the Office of Naval Research.

PY - 1989

Y1 - 1989

N2 - We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation. In the present work we model a single quantum well electron system with the inclusion of intra- and intersubband carrier-carrier scattering and nonequilibrium polar optical phonons. Simulated results with and without these basic mechanisms show that the experimentally measured long time constant pile-up of carriers in upper subbands in wide quantum wells appears to be associated with the thermal tail of the total carrier distribution function which remains hot for long times after the pump pulse due to hot phonon effects.

AB - We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation. In the present work we model a single quantum well electron system with the inclusion of intra- and intersubband carrier-carrier scattering and nonequilibrium polar optical phonons. Simulated results with and without these basic mechanisms show that the experimentally measured long time constant pile-up of carriers in upper subbands in wide quantum wells appears to be associated with the thermal tail of the total carrier distribution function which remains hot for long times after the pump pulse due to hot phonon effects.

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EP - 563

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells

Abstract

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