Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have used an ensemble Monte Carlo simulation of semiconductor quantum wells to simulate recent time resolved optical experiments of intersubband relaxation. In the present work we model a single quantum well electron system with the inclusion of intra- and intersubband carrier-carrier scattering and nonequilibrium polar optical phonons. Simulated results with and without these basic mechanisms show that the experimentally measured long time constant pile-up of carriers in upper subbands in wide quantum wells appears to be associated with the thermal tail of the total carrier distribution function which remains hot for long times after the pump pulse due to hot phonon effects.

Original languageEnglish (US)
Pages (from-to)561-563
Number of pages3
JournalSuperlattices and Microstructures
Volume5
Issue number4
DOIs
StatePublished - 1989
Externally publishedYes

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Semiconductor quantum wells
quantum wells
simulation
Phonons
Piles
Distribution functions
piles
Pumps
Scattering
time constant
phonons
Electrons
distribution functions
inclusions
pumps
Monte Carlo simulation
pulses
Experiments
scattering
electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells. / Goodnick, Stephen; Lugli, P.

In: Superlattices and Microstructures, Vol. 5, No. 4, 1989, p. 561-563.

Research output: Contribution to journalArticle

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