1 Citation (Scopus)

Abstract

This paper presents a 3-D Ensemble Monte Carlo (EMC) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability failures integrating the effects of (1) statistical fluctuations in number and position of the dopant atom (RDF) in the channel region [1] and (2) trapping or de-trapping of single or multiple carriers in the defect states positioned near the Si:SiO 2 interface and at random locations in the inversion region between source and drain [2], [3]. Our thorough investigations suggest that the fluctuations in threshold voltage and its standard deviation are considerably larger than the on-current fluctuations for randomly chosen dopant distributions in the channel and bulk regions. In addition, the random location and number of trap are not correlated with those of channel dopants making the reliability projection dependent on averaged statistic of a large number of random channel dopants and strategic positioning of the traps in the channel.

Original languageEnglish (US)
Title of host publicationNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Pages126-129
Number of pages4
Volume2
StatePublished - 2010
EventNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA, United States
Duration: Jun 21 2010Jun 24 2010

Other

OtherNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
CountryUnited States
CityAnaheim, CA
Period6/21/106/24/10

Fingerprint

Telegraph
Doping (additives)
Threshold voltage
Drain current
Statistics
Atoms
Defects
Monte Carlo simulation

Keywords

  • Monte Carlo device simulations
  • Random dopant fluctuations
  • Random telegraph noise fluctuations

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ashraf, N., Vasileska, D., & Ma, Z. (2010). Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions. In Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 (Vol. 2, pp. 126-129)

Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions. / Ashraf, N.; Vasileska, Dragica; Ma, Z.

Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. Vol. 2 2010. p. 126-129.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ashraf, N, Vasileska, D & Ma, Z 2010, Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions. in Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. vol. 2, pp. 126-129, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Anaheim, CA, United States, 6/21/10.
Ashraf N, Vasileska D, Ma Z. Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions. In Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. Vol. 2. 2010. p. 126-129
Ashraf, N. ; Vasileska, Dragica ; Ma, Z. / Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions. Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. Vol. 2 2010. pp. 126-129
@inproceedings{fa99dad723224ca3ada796f0877654ca,
title = "Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions",
abstract = "This paper presents a 3-D Ensemble Monte Carlo (EMC) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability failures integrating the effects of (1) statistical fluctuations in number and position of the dopant atom (RDF) in the channel region [1] and (2) trapping or de-trapping of single or multiple carriers in the defect states positioned near the Si:SiO 2 interface and at random locations in the inversion region between source and drain [2], [3]. Our thorough investigations suggest that the fluctuations in threshold voltage and its standard deviation are considerably larger than the on-current fluctuations for randomly chosen dopant distributions in the channel and bulk regions. In addition, the random location and number of trap are not correlated with those of channel dopants making the reliability projection dependent on averaged statistic of a large number of random channel dopants and strategic positioning of the traps in the channel.",
keywords = "Monte Carlo device simulations, Random dopant fluctuations, Random telegraph noise fluctuations",
author = "N. Ashraf and Dragica Vasileska and Z. Ma",
year = "2010",
language = "English (US)",
isbn = "9781439834022",
volume = "2",
pages = "126--129",
booktitle = "Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010",

}

TY - GEN

T1 - Monte Carlo simulation of impact of random telegraph noise in 45 nm MOSFET due to combined effects of random interface traps and random channel dopant distributions

AU - Ashraf, N.

AU - Vasileska, Dragica

AU - Ma, Z.

PY - 2010

Y1 - 2010

N2 - This paper presents a 3-D Ensemble Monte Carlo (EMC) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability failures integrating the effects of (1) statistical fluctuations in number and position of the dopant atom (RDF) in the channel region [1] and (2) trapping or de-trapping of single or multiple carriers in the defect states positioned near the Si:SiO 2 interface and at random locations in the inversion region between source and drain [2], [3]. Our thorough investigations suggest that the fluctuations in threshold voltage and its standard deviation are considerably larger than the on-current fluctuations for randomly chosen dopant distributions in the channel and bulk regions. In addition, the random location and number of trap are not correlated with those of channel dopants making the reliability projection dependent on averaged statistic of a large number of random channel dopants and strategic positioning of the traps in the channel.

AB - This paper presents a 3-D Ensemble Monte Carlo (EMC) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability failures integrating the effects of (1) statistical fluctuations in number and position of the dopant atom (RDF) in the channel region [1] and (2) trapping or de-trapping of single or multiple carriers in the defect states positioned near the Si:SiO 2 interface and at random locations in the inversion region between source and drain [2], [3]. Our thorough investigations suggest that the fluctuations in threshold voltage and its standard deviation are considerably larger than the on-current fluctuations for randomly chosen dopant distributions in the channel and bulk regions. In addition, the random location and number of trap are not correlated with those of channel dopants making the reliability projection dependent on averaged statistic of a large number of random channel dopants and strategic positioning of the traps in the channel.

KW - Monte Carlo device simulations

KW - Random dopant fluctuations

KW - Random telegraph noise fluctuations

UR - http://www.scopus.com/inward/record.url?scp=78049422765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78049422765&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:78049422765

SN - 9781439834022

VL - 2

SP - 126

EP - 129

BT - Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010

ER -