Monte carlo simulation of hole transport in sige alloys

This paper employs the Ensemble Monte Carlo method to simulate the transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disor-der scattering in these calculations. The mobility of holes for a range of SiGe alloys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is ade-quate.