Abstract

Gallium Nitride (GaN) is becoming increasingly more attractive for a wide range of applications, such as optoelectronics, wireless communication, automotive and power electronics. Switching GaN diodes are becoming indispensable for power electronics due to their low on-resistance and capacity to withstand high voltages. A great deal of research has been done on GaN diodes over the decades but a major issue with previous studies is the lack of explicit inclusion of electron-electron interaction, which can be quite important for high carrier densities encountered. Here we consider this electron-electron interaction, within a non-parabolic band scheme, as the first attempt at including such effects when modeling nitride devices. Electron-electron scattering is treated using a real space molecular dynamics approach, which exactly models this interaction within a semi-classical framework. Results in particular focus on the strong effect of carrier-carrier scattering on the drain side of the gate, where rapid carrier relaxation occurs.

Original languageEnglish (US)
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages338-341
Number of pages4
DOIs
StatePublished - 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: Aug 2 2007Aug 5 2007

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period8/2/078/5/07

Fingerprint

Gallium nitride
gallium nitrides
Electron-electron interactions
electron scattering
Diodes
diodes
Power electronics
Automobile electronic equipment
electrons
Electron scattering
simulation
wireless communication
interactions
electronics
Nitrides
Optoelectronic devices
nitrides
Carrier concentration
Molecular dynamics
high voltages

Keywords

  • Electron-electron interactions
  • GaN
  • High electron mobility transistors
  • PM approach
  • Thermalization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Ashok, A., Vasileska, D., Hartin, O., & Goodnick, S. (2007). Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 338-341). [4601203] https://doi.org/10.1109/NANO.2007.4601203

Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions. / Ashok, Ashwin; Vasileska, Dragica; Hartin, Olin; Goodnick, Stephen.

2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 338-341 4601203.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ashok, A, Vasileska, D, Hartin, O & Goodnick, S 2007, Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions. in 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings., 4601203, pp. 338-341, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Hong Kong, China, 8/2/07. https://doi.org/10.1109/NANO.2007.4601203
Ashok A, Vasileska D, Hartin O, Goodnick S. Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 338-341. 4601203 https://doi.org/10.1109/NANO.2007.4601203
Ashok, Ashwin ; Vasileska, Dragica ; Hartin, Olin ; Goodnick, Stephen. / Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions. 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. pp. 338-341
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