Abstract

Gallium Nitride (GaN) is becoming increasingly more attractive for a wide range of applications, such as optoelectronics, wireless communication, automotive and power electronics. Switching GaN diodes are becoming indispensable for power electronics due to their low on-resistance and capacity to withstand high voltages. A great deal of research has been done on GaN diodes over the decades but a major issue with previous studies is the lack of explicit inclusion of electron-electron interaction, which can be quite important for high carrier densities encountered. Here we consider this electron-electron interaction, within a non-parabolic band scheme, as the first attempt at including such effects when modeling nitride devices. Electron-electron scattering is treated using a real space molecular dynamics approach, which exactly models this interaction within a semi-classical framework. It results in strong carrier-carrier scattering on the biased contact of the resistor, where rapid carrier relaxation occurs.

Original languageEnglish (US)
Title of host publicationLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Pages131-138
Number of pages8
Volume4818 LNCS
DOIs
StatePublished - 2008
Event6th International Conference on Large-Scale Scientific Computing, LSSC 2007 - Sozopol, Bulgaria
Duration: Jun 5 2007Jun 9 2007

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume4818 LNCS
ISSN (Print)03029743
ISSN (Electronic)16113349

Other

Other6th International Conference on Large-Scale Scientific Computing, LSSC 2007
CountryBulgaria
CitySozopol
Period6/5/076/9/07

Fingerprint

Gallium nitride
Nitrides
Diode
Electron-electron interactions
Diodes
Monte Carlo Simulation
Electron
Power electronics
Interaction
Automobile electronic equipment
Power Electronics
Electron scattering
Optoelectronic devices
Resistors
Carrier concentration
Molecular dynamics
Scattering
Electrons
Communication
Optoelectronics

ASJC Scopus subject areas

  • Computer Science(all)
  • Theoretical Computer Science

Cite this

Ashok, A., Vasileska, D., Hartin, O., & Goodnick, S. (2008). Monte Carlo simulation of GaN diode including intercarrier interactions. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 4818 LNCS, pp. 131-138). (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 4818 LNCS). https://doi.org/10.1007/978-3-540-78827-0_13

Monte Carlo simulation of GaN diode including intercarrier interactions. / Ashok, A.; Vasileska, Dragica; Hartin, O.; Goodnick, Stephen.

Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). Vol. 4818 LNCS 2008. p. 131-138 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 4818 LNCS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ashok, A, Vasileska, D, Hartin, O & Goodnick, S 2008, Monte Carlo simulation of GaN diode including intercarrier interactions. in Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). vol. 4818 LNCS, Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), vol. 4818 LNCS, pp. 131-138, 6th International Conference on Large-Scale Scientific Computing, LSSC 2007, Sozopol, Bulgaria, 6/5/07. https://doi.org/10.1007/978-3-540-78827-0_13
Ashok A, Vasileska D, Hartin O, Goodnick S. Monte Carlo simulation of GaN diode including intercarrier interactions. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). Vol. 4818 LNCS. 2008. p. 131-138. (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)). https://doi.org/10.1007/978-3-540-78827-0_13
Ashok, A. ; Vasileska, Dragica ; Hartin, O. ; Goodnick, Stephen. / Monte Carlo simulation of GaN diode including intercarrier interactions. Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). Vol. 4818 LNCS 2008. pp. 131-138 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)).
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