Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures

Stephen Goodnick, Paolo Lugli, Wayne H. Knox, Daniel S. Chemla

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We use an ensemble Monte Carlo simulation for photoexcited electrons and holes in a quantum well structure to model the effects of carrier-carrier scattering on the observed time resolved differential transmission spectrum from undoped, n- and p-type structures. The simulated absorption spectrum agrees with the qualitative trends observed experimentally showing reduced thermalization times as the density in the system increases. However, differences are found between the model and experiments in very dense systems with carrier concentrations exceeding 5×1011/cm2 which we attribute to strong renormalization effects in the optical spectrum and the breakdown of the single particle picture.

Original languageEnglish (US)
Pages (from-to)1737-1741
Number of pages5
JournalSolid State Electronics
Volume32
Issue number12
DOIs
StatePublished - 1989
Externally publishedYes

Fingerprint

Heterojunctions
Spectroscopy
Semiconductor materials
Semiconductor quantum wells
spectroscopy
Carrier concentration
Absorption spectra
simulation
Scattering
Electrons
optical spectrum
breakdown
quantum wells
absorption spectra
trends
Experiments
scattering
Monte Carlo simulation
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures. / Goodnick, Stephen; Lugli, Paolo; Knox, Wayne H.; Chemla, Daniel S.

In: Solid State Electronics, Vol. 32, No. 12, 1989, p. 1737-1741.

Research output: Contribution to journalArticle

Goodnick, Stephen ; Lugli, Paolo ; Knox, Wayne H. ; Chemla, Daniel S. / Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures. In: Solid State Electronics. 1989 ; Vol. 32, No. 12. pp. 1737-1741.
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