Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures

Stephen M. Goodnick; Paolo Lugli; Wayne H. Knox; Daniel S. Chemla

doi:10.1016/0038-1101(89)90304-3

Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures

Stephen M. Goodnick, Paolo Lugli, Wayne H. Knox, Daniel S. Chemla

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We use an ensemble Monte Carlo simulation for photoexcited electrons and holes in a quantum well structure to model the effects of carrier-carrier scattering on the observed time resolved differential transmission spectrum from undoped, n- and p-type structures. The simulated absorption spectrum agrees with the qualitative trends observed experimentally showing reduced thermalization times as the density in the system increases. However, differences are found between the model and experiments in very dense systems with carrier concentrations exceeding 5×10¹¹/cm² which we attribute to strong renormalization effects in the optical spectrum and the breakdown of the single particle picture.

Original language	English (US)
Pages (from-to)	1737-1741
Number of pages	5
Journal	Solid State Electronics
Volume	32
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(89)90304-3
State	Published - Dec 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(89)90304-3

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abstract = "We use an ensemble Monte Carlo simulation for photoexcited electrons and holes in a quantum well structure to model the effects of carrier-carrier scattering on the observed time resolved differential transmission spectrum from undoped, n- and p-type structures. The simulated absorption spectrum agrees with the qualitative trends observed experimentally showing reduced thermalization times as the density in the system increases. However, differences are found between the model and experiments in very dense systems with carrier concentrations exceeding 5×1011/cm2 which we attribute to strong renormalization effects in the optical spectrum and the breakdown of the single particle picture.",

author = "Goodnick, {Stephen M.} and Paolo Lugli and Knox, {Wayne H.} and Chemla, {Daniel S.}",

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T1 - Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures

AU - Goodnick, Stephen M.

AU - Lugli, Paolo

AU - Knox, Wayne H.

AU - Chemla, Daniel S.

PY - 1989/12

Y1 - 1989/12

N2 - We use an ensemble Monte Carlo simulation for photoexcited electrons and holes in a quantum well structure to model the effects of carrier-carrier scattering on the observed time resolved differential transmission spectrum from undoped, n- and p-type structures. The simulated absorption spectrum agrees with the qualitative trends observed experimentally showing reduced thermalization times as the density in the system increases. However, differences are found between the model and experiments in very dense systems with carrier concentrations exceeding 5×1011/cm2 which we attribute to strong renormalization effects in the optical spectrum and the breakdown of the single particle picture.

AB - We use an ensemble Monte Carlo simulation for photoexcited electrons and holes in a quantum well structure to model the effects of carrier-carrier scattering on the observed time resolved differential transmission spectrum from undoped, n- and p-type structures. The simulated absorption spectrum agrees with the qualitative trends observed experimentally showing reduced thermalization times as the density in the system increases. However, differences are found between the model and experiments in very dense systems with carrier concentrations exceeding 5×1011/cm2 which we attribute to strong renormalization effects in the optical spectrum and the breakdown of the single particle picture.

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SP - 1737

EP - 1741

JO - Solid State Electronics

JF - Solid State Electronics

IS - 12

ER -

Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures

Abstract

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