Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors

R. P. Joshi, R. O. Grondin, D. K. Ferry

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in AlxGa1-xAs. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions.

Original languageEnglish (US)
Pages (from-to)5685-5692
Number of pages8
JournalPhysical Review B
Volume42
Issue number9
DOIs
StatePublished - 1990

Fingerprint

Semiconductor materials
Electrons
Laser excitation
simulation
Phonons
Luminescence
phonons
Experiments
Scattering
electron energy
luminescence
Cooling
Plasmas
cooling
scattering
excitation
lasers
Monte Carlo simulation
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors. / Joshi, R. P.; Grondin, R. O.; Ferry, D. K.

In: Physical Review B, Vol. 42, No. 9, 1990, p. 5685-5692.

Research output: Contribution to journalArticle

Joshi, R. P. ; Grondin, R. O. ; Ferry, D. K. / Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors. In: Physical Review B. 1990 ; Vol. 42, No. 9. pp. 5685-5692.
@article{a7c2023529624d63aa6f5e39c8877b0b,
title = "Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors",
abstract = "We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in AlxGa1-xAs. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions.",
author = "Joshi, {R. P.} and Grondin, {R. O.} and Ferry, {D. K.}",
year = "1990",
doi = "10.1103/PhysRevB.42.5685",
language = "English (US)",
volume = "42",
pages = "5685--5692",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors

AU - Joshi, R. P.

AU - Grondin, R. O.

AU - Ferry, D. K.

PY - 1990

Y1 - 1990

N2 - We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in AlxGa1-xAs. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions.

AB - We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in AlxGa1-xAs. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions.

UR - http://www.scopus.com/inward/record.url?scp=0001457573&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001457573&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.42.5685

DO - 10.1103/PhysRevB.42.5685

M3 - Article

AN - SCOPUS:0001457573

VL - 42

SP - 5685

EP - 5692

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 9

ER -