Monte Carlo simulation of electron-hole thermalization in photoexcited bulk semiconductors

R. P. Joshi, R. O. Grondin, D. K. Ferry

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

We use an ensemble Monte Carlo technique to model the thermalization of electron-hole plasmas following a laser excitation. For concreteness, we concentrate on the results of two recent experiments. Our calculations quantitatively confirm the existence of separate effective electron and hole temperatures during the first 10 ps in AlxGa1-xAs. The carrier cooling can be explained by invoking both nonequilibrium phonons and carrier degeneracy. Comparison with a band-edge luminescence experiment brings out features concerning the electron-hole and intervalley scattering contributions.

Original languageEnglish (US)
Pages (from-to)5685-5692
Number of pages8
JournalPhysical Review B
Volume42
Issue number9
DOIs
StatePublished - Jan 1 1990

ASJC Scopus subject areas

  • Condensed Matter Physics

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