Monte Carlo simulation of a ″true″ quantum wire

Lucio Rota; F. Rossi; Paolo Lugli; Elisa Molinari; Stephen M. Goodnick; W. Porod

Monte Carlo simulation of a ″true″ quantum wire

Lucio Rota, F. Rossi, Paolo Lugli, Elisa Molinari, Stephen M. Goodnick, W. Porod

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a Monte Carlo analysis of a `true' GaAs-based quantum wire, whose dimensions correspond to present state-of-the-art technology. Intrasubband and intersubband scattering rates for the electron-polar optical phonon interaction are included in the simulation as well as electron-electron interaction. We have studied the nonequilibrium transport characteristics of the one-dimensional system in two different situations: the response of the electron gas to an external electric field applied along the wire direction, and the cooling dynamics following laser photoexcitation. With respect to 3-D and 2-D systems, we can show that the electron-phonon interaction is not substantially modified, while a strong reduction in the electron- electron scattering rate of the wire is found.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Publ by Int Soc for Optical Engineering
Pages	161-171
Number of pages	11
ISBN (Print)	0819408379
State	Published - Dec 1 1992
Externally published	Yes
Event	Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication - Somerset, NJ, USA Duration: Mar 23 1992 → Mar 26 1992

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1676
ISSN (Print)	0277-786X

Other

Other	Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication
City	Somerset, NJ, USA
Period	3/23/92 → 3/26/92

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Monte Carlo simulation of a ″true″ quantum wire. / Rota, Lucio; Rossi, F.; Lugli, Paolo et al.
Proceedings of SPIE - The International Society for Optical Engineering. Publ by Int Soc for Optical Engineering, 1992. p. 161-171 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1676).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rota, L, Rossi, F, Lugli, P, Molinari, E, Goodnick, SM & Porod, W 1992, Monte Carlo simulation of a ″true″ quantum wire. in Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE - The International Society for Optical Engineering, vol. 1676, Publ by Int Soc for Optical Engineering, pp. 161-171, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, Somerset, NJ, USA, 3/23/92.

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AU - Rossi, F.

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AU - Porod, W.

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AB - We present a Monte Carlo analysis of a `true' GaAs-based quantum wire, whose dimensions correspond to present state-of-the-art technology. Intrasubband and intersubband scattering rates for the electron-polar optical phonon interaction are included in the simulation as well as electron-electron interaction. We have studied the nonequilibrium transport characteristics of the one-dimensional system in two different situations: the response of the electron gas to an external electric field applied along the wire direction, and the cooling dynamics following laser photoexcitation. With respect to 3-D and 2-D systems, we can show that the electron-phonon interaction is not substantially modified, while a strong reduction in the electron- electron scattering rate of the wire is found.

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ER -

Monte Carlo simulation of a ″true″ quantum wire

Abstract

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ASJC Scopus subject areas

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