Monte Carlo particle-based simulation of FIBMOS: Impact of strong quantum confinement on device performance

I. Knezevic, Dragica Vasileska, R. Akis, J. Kang, X. He, D. K. Schroder

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A 250 nm focused-ion-beam MOSFET (FIBMOS) has been simulated using a two-dimensional coupled Monte Carlo-Poisson particle-based solver, in which quantum effects have been taken into account by incorporating an effective potential scheme into a classical particle simulator. Inclusion of quantum effects in the analysis of FIBMOS operation is crucial because the high doping density of the p+-implant leads to strong quantum confinement of carriers at the implant/oxide interface. We show that the device drive current, threshold voltage and transconductance are indeed extremely sensitive to the proper treatment of quantization.

Original languageEnglish (US)
Pages (from-to)386-390
Number of pages5
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

Keywords

  • Device modeling
  • FIBMOS
  • Monte Carlo simulation
  • Quantum effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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