Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs

M. A. Osman, H. L. Grubin, J. P. Kreskovsky, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

The role of the electron-electron (e-e), hole-hole (h-h), and electron-hole (e-h) interaction on ultrafast cooling of carriers in GaAs is examined for excess excitation energies of 40, 200, and 300 meV using an Ensemble Monte Carlo (EMC) approach. It is found that when the initial energy of the carrier is below the phonon emission threshold carrier-carrier (c-c) interactions stimulate either the optical phonon emission or absorption process depending on whether the initial energy of the carrier is above or below the thermal energy, respectively. The e-h interaction role is strong when excitation energy is below the LO phonon emission threshold.

Original languageEnglish (US)
Pages (from-to)94-101
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume793
DOIs
StatePublished - Aug 3 1987

Fingerprint

Hot carriers
Gallium Arsenide
Cooling
cooling
Phonon
Electrons
Excitation energy
Electron
Energy
Interaction
interactions
Excitation
Thermal energy
thresholds
energy
thermal energy
excitation
Excess
Ensemble
Absorption

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Monte carlo investigation of carrier-carrier interaction and ultrafast cooling of hot photoexcited carriers in GaAs. / Osman, M. A.; Grubin, H. L.; Kreskovsky, J. P.; Ferry, D. K.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 793, 03.08.1987, p. 94-101.

Research output: Contribution to journalArticle

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