Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

Siddharth Karkare; Dimitre Dimitrov; William Schaff; Luca Cultrera; Adam Bartnik; Xianghong Liu; Eric Sawyer; Teresa Esposito; Ivan Bazarov

doi:10.1063/1.4794822

Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

Siddharth Karkare, Dimitre Dimitrov, William Schaff, Luca Cultrera, Adam Bartnik, Xianghong Liu, Eric Sawyer, Teresa Esposito, Ivan Bazarov

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. Here, photoemission from such photocathodes is modeled using detailed Monte Carlo electron transport simulations. Simulations show a quantitative agreement with the experimental results for quantum efficiency, energy distributions of emitted electrons, and response time without the assumption of any ad hoc parameters. This agreement between simulation and experiment sheds light on the mechanism of electron emission and provides an opportunity to design novel semiconductor photocathodes with optimized performance.

Original language	English (US)
Article number	104904
Journal	Journal of Applied Physics
Volume	113
Issue number	10
DOIs	https://doi.org/10.1063/1.4794822
State	Published - Mar 14 2013
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4794822

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title = "Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes",

abstract = "High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. Here, photoemission from such photocathodes is modeled using detailed Monte Carlo electron transport simulations. Simulations show a quantitative agreement with the experimental results for quantum efficiency, energy distributions of emitted electrons, and response time without the assumption of any ad hoc parameters. This agreement between simulation and experiment sheds light on the mechanism of electron emission and provides an opportunity to design novel semiconductor photocathodes with optimized performance.",

author = "Siddharth Karkare and Dimitre Dimitrov and William Schaff and Luca Cultrera and Adam Bartnik and Xianghong Liu and Eric Sawyer and Teresa Esposito and Ivan Bazarov",

note = "Funding Information: This work has been funded by NSF under grant number DMR-0807731, DOE under grant number DE-SC0003965 and DOE-SBIR grant number DE-SC0006246.",

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doi = "10.1063/1.4794822",

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T1 - Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

AU - Karkare, Siddharth

AU - Dimitrov, Dimitre

AU - Schaff, William

AU - Cultrera, Luca

AU - Bartnik, Adam

AU - Liu, Xianghong

AU - Sawyer, Eric

AU - Esposito, Teresa

AU - Bazarov, Ivan

N1 - Funding Information: This work has been funded by NSF under grant number DMR-0807731, DOE under grant number DE-SC0003965 and DOE-SBIR grant number DE-SC0006246.

PY - 2013/3/14

Y1 - 2013/3/14

N2 - High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. Here, photoemission from such photocathodes is modeled using detailed Monte Carlo electron transport simulations. Simulations show a quantitative agreement with the experimental results for quantum efficiency, energy distributions of emitted electrons, and response time without the assumption of any ad hoc parameters. This agreement between simulation and experiment sheds light on the mechanism of electron emission and provides an opportunity to design novel semiconductor photocathodes with optimized performance.

AB - High quantum yield, low transverse energy spread, and prompt response time make GaAs activated to negative electron affinity an ideal candidate for a photocathode in high brightness photoinjectors. Even after decades of investigation, the exact mechanism of electron emission from GaAs is not well understood. Here, photoemission from such photocathodes is modeled using detailed Monte Carlo electron transport simulations. Simulations show a quantitative agreement with the experimental results for quantum efficiency, energy distributions of emitted electrons, and response time without the assumption of any ad hoc parameters. This agreement between simulation and experiment sheds light on the mechanism of electron emission and provides an opportunity to design novel semiconductor photocathodes with optimized performance.

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Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes

Abstract

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