Monte Carlo and energy balance simulations of deep sub-micrometer conventional and asymmetric MOSFET device structures

Anand Mannargudi, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device simulations are essential to explore new device designs, optimize performance and understand underlying physics. As we scale the gate lengths of deep sub micrometer devices, there are always contradicting requirements of increased hot carrier reliability and reduced short channel effects. These contradicting requirements have led semiconductor device engineers towards asymmetric device structures. Typical methods employed to simulate such devices include commercial simulation software such as ATLAS and Monte Carlo particle-based simulations. In this work, we have simulated conventional and highly asymmetric 100nm n-channel Focused-Ion-Beam MOS device(FIBMOS). As a second effort we have pushed the gate length of this asymmetric device down to 50nm and compared the results with that of a conventional MOS device of the same gate length.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages1-4
Number of pages4
StatePublished - Dec 1 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Keywords

  • Asymmetric device structure
  • FIBMOS
  • Monte Carlo

ASJC Scopus subject areas

  • Engineering(all)

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