Monte Carlo analysis of high-field hole diffusion coefficients in nondegenerate GaAs

R. Joshi, R. O. Grondin

    Research output: Contribution to journalArticle

    5 Scopus citations

    Abstract

    We examine the field dependence of the carrier diffusion coefficients in GaAs using an ensemble Monte Carlo technique. An analysis for the field dependence of the hole diffusivity is presented for the first time. Unlike for the electrons, no significant interband transfer effects are observed. The hole diffusivity is seen to decrease monotonically with increasing field.

    Original languageEnglish (US)
    Pages (from-to)2438-2439
    Number of pages2
    JournalApplied Physics Letters
    Volume54
    Issue number24
    DOIs
    StatePublished - Dec 1 1989

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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